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The Texture and Electrical Properties of Zr and ZrNx Thin Films Deposited by Dc Sputtering

Published online by Cambridge University Press:  01 February 2011

Chuan-Pu Liu  and
Heng-Ghieh Yang
Chuan-Pu Liu
Affiliation:
Department of Materials Science and Engineering, National Cheng-Kung University, Tainan, Taiwan 701
Heng-Ghieh Yang
Affiliation:
Department of Materials Science and Engineering, National Cheng-Kung University, Tainan, Taiwan 701
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Abstract

Zr and ZrNx thin films are grown on Si(001) by DC magnetron sputtering. The detailed microstructure evolution and its corresponding electrical properties are systematically studied with various processing parameters including applied power, N2/Ar ratio, substrate bias and substrate temperature by 4-point probe, EPMA and XRD. It is found that while the negative substrate bias can decrease the resistivity of both Zr and ZrNx thin films, the texture microstructure of each thin film in the series is changed differently. As increasing N2/Ar ratio, the resistivity decreases in the beginning and then increases rapidly, which results from the variations of compositions and phases, while this minimum resistivity point shifts to a higher N2/Ar ratio for the films sputtered under higher applied power. The substrate temperature not only decreases the ZrNx film resistivity, but also increases the (002) preferred orientations most efficiently. The cause of each phenomenon is briefly discussed. Finally, two samples showing different degrees of (002) to (111) textures are annealed to investigate the diffusion barrier properties from a sandwich structure of Cu/ZrNx/Si(001). Results from 4-point probe reveal that the film with higher degree of (111) textures has a superior thermal stability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 721: Symposia E/J – Texture and Microstructure in Electronic and Magnetic Films – Nanostructural Magnetic Materials for Data Storage , 2002 , J4.9
Copyright
Copyright © Materials Research Society 2002

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