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Temperature Ramping for Nucleation of Oxygen Precipitates in Silicon

  • R. F. Pinizzotto (a1), H. F. Schaake (a1), R. G. Massey (a1) and D. W. Heidt (a1)

Abstract

A new method for the nucleation of oxygen precipitates in Czochralski silicon is described. The temperature is ramped at approximately 100°C/hr from a very low value, near 400°C, to the highest temperature used for subsequent process steps. The technique generates a larger precipitate number density and a greater volume fraction of precipitated oxygen than standard isothermal nucleation anneals. The morphology of the precipitates changes from 0.lum sizéd (100) platelets to small particles unresovable by TEM. The new temperature ramping technique can reduce the time needed for precipitate nucleation by at least a factor of three. The details of oxygen precipitation can be totally controlled by adjusting the temperature ramp rate as a function of time.

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[1] For a review, refer to the paper by R.A.Craven in this Volume or to Huff, H.R., Solid State Technology, Feb 1983, pg. 89 and April 1983, pg. 211.
[2] Kishino, S., Aoshima, T., Yoshinaka, A., Shimizu, H. and Ono, M., Jap. J. Appl. Phys., 23(1984)L9.10.1143/JJAP.23.L9
[3[ Bischoff, B.K., Patrick, W.J. and Strudwick, T.H., U.S. Patent 4,437,922, 20 March 1984.
[4] Barrett, C.R., Nix, W.D. and Tetelman, A.S., The Principles of Engineering Materials, Prentice-Hall, Inc., Englewood Cliffs, New Jersey, 1973.
[5] Huff, H.R., Schaake, H.F., Robinson, J.T., Baber, S.C. and Wong, D., J. Electrochem. Soc., 130(1983)1551.10.1149/1.2120032
[6] Pinizzotto, R.F. and Schaake, H.F., Proc. Mater. Res. Soc., 2(1981)387.10.1557/PROC-2-387
[7] Tan, T.Y. and Tice, W.K., Phil. Mag., 34(1976)615.10.1080/14786437608223798

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