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Temperature Effect on the Quality of Ain Thin Films

Published online by Cambridge University Press:  15 February 2011

Margarita P. Thompson ,
Andrew R. Drews ,
Changhe Huang  and
Gregory W. Auner
Margarita P. Thompson
Affiliation:
CH&MSE Dept., Wayne State University, Detroit, MI 48202
Andrew R. Drews
Affiliation:
Physics Dept., Scientific Research Laboratories, Ford Motor Company, Dearborn, MI 48121
Changhe Huang
Affiliation:
ECE Dept., Wayne State University, Detroit, MI 48202
Gregory W. Auner
Affiliation:
ECE Dept., Wayne State University, Detroit, MI 48202
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Abstract

AIN thin films were deposited at various substrate temperatures via Plasma Source Molecular Beam Epitaxy. The films were grown on 6H-SiC (0001) substrates. Reflection High Energy Electron Diffraction and Atomic Force Microscopy showed a dramatic change in the surface morphology of the film grown at 640°C. This is attributed to a change in the growth mechanism from pseudomorphic at lower temperatures to three-dimensional at higher than 640°C temperatures. Photoreflectance measurements showed an absorption shift toward 200 nm as the deposition temperature increases which is attributed to the change in the growth mechanism at higher temperatures. X-Ray Diffraction was unable to conclusively determine the AIN (0002) peak due to a significant diffuse intensity from the SiC (0002) peak. A MIS structure was created by depositing Pt contacts on the film grown at 500°C. I-V measurements showed that the Pt/AIN contact is Schottky.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.7
Copyright
Copyright © Materials Research Society 1999

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