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Temperature Dependent Quasi-Periodic Facetting of AlAs Grown by MBE on (100) GaAs Substrates

Published online by Cambridge University Press:  15 February 2011

Richard Mirin ,
Mohan Krishnamurthy ,
James Ibbetson ,
Arthur Gossard ,
John English  and
Pierre Petroff
Richard Mirin
Affiliation:
Dept. of ECE Santa Barbara, CA 93106
Mohan Krishnamurthy
Affiliation:
Materials Dept. UC Santa Barbara Santa Barbara, CA 93106
James Ibbetson
Affiliation:
Materials Dept. UC Santa Barbara Santa Barbara, CA 93106
Arthur Gossard
Affiliation:
Materials Dept. UC Santa Barbara Santa Barbara, CA 93106
John English
Affiliation:
Materials Dept. UC Santa Barbara Santa Barbara, CA 93106
Pierre Petroff
Affiliation:
Materials Dept. UC Santa Barbara Santa Barbara, CA 93106
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Abstract

High temperature (≥ 650°C) MBE growth of AlAs and AlAs/GaAs superlattices on (100) GaAs is shown to lead to quasi-periodic facetting. We demonstrate that the facetting is only due to the AlAs layers, and growth of GaAs on top of the facets replanarizes the surface. We show that the roughness between the AlAs and GaAs layers increases with increasing number of periods in the superlattice. The roughness increases to form distinct facets, which rapidly grow at the expense of the (100) surface. Within a few periods of the initial facet formation, the (100) surface has disappeared and only the facet planes are visible in cross-sectional transmission electron micrographs. At this point, the reflection high-energy electron diffraction pattern is spotty, and the specular spot is a distinct chevron. We also show that the facetting becomes more pronounced as the substrate temperature is increased from 620°C to 710°C. Atomic force micrographs show that the valleys enclosed by the facets can be several microns long, but they may also be only several nanometers long, depending on the growth conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 312: Symposium P – Common Themes and Mechanisms of Epitaxial Growth , 1993 , 273
Copyright
Copyright © Materials Research Society 1993

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References

[1] Sato, M., Maehashi, K., Asahi, H., Hasegawa, S., Nakashima, H., Superlattices and Microstructures 7, 279 (1990)CrossRefGoogle Scholar
[2] Nötzel, R., Däweritz, L., Ledentsov, N.N., and Ploog, K., Appl. Phys. Lett. 60, 1615 (1992)CrossRefGoogle Scholar
[3] Stall, R.A., Zilko, J., Swaminathan, V., and Schumaker, N., J. Vac. Sci. Tech. B 3, 524 (1985)CrossRefGoogle Scholar
[4] Tiller, W.A., The Science of Crystallization: Microscopic Interfacial Phenomena (Cambridge University Press, Cambridge, 1991) ch. 3, p.110 CrossRefGoogle Scholar
[5] Ohta, K., Kojima, T., and Yamaguchi, H., J. Cryst. Growth 95, 71 (1989)CrossRefGoogle Scholar
[6] Sugaya, T., Yokoyama, S., and Kawabe, M., Proc. Symp. GaAs and Related Compounds, Karuizawa, Japan, 1989, 147, lOP Publishing Ltd., London (1990)Google Scholar
[7] Mirin, R., Krishnamurthy, M., Ibbetson, J., English, J., and Gossard, A., in Proceedings of the 7th International Conference on Molecular Beam Epitaxy (MBE VII), Schw~ibisch Gmbind, Germany, August 24-28, 1992, (North-Holland, Amsterdam, 1993)Google Scholar
[8] Mirin, R., Tan, I-H., Weman, H., Leonard, M., Yasuda, T., Bowers, J.E., and Hu, E., J. Vac. Sci. Technol. A, 697 (1992)Google Scholar