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Temperature Dependent Carrier Transport in Single-Crystalline Si TFTs inside a Location-Controlled Grain

  • V. Rana (a1), R. Ishihara (a1), Y. Hiroshima (a2), D. Abe (a2), S. Inoue (a2), T. Shimoda (a2), J.W. Metselaar (a1) and C. I.M Beenakker (a1)...


Temperature dependant I-V characteristics were measured on single-crystalline Si (c-Si) TFTs fabricated inside a location-controlled grain by [.proportional]-Czochralski process using an excimer-laser. At ON-state, temperature the activation energy (Ea) of the drain current drops to a negative value. The field effect mobility ([.proportional]FE) also decreases with temperature with a power of -1.86, which indicates that, the carriers transport are governed by acoustic phonon scattering. At OFF state with a small gate bias, leakage current is dominated by thermal generation, however the Ea was 0.9eV, i.e., near the band gap value of Si. This suggests that the carrier generation centers are not located at the mid-gap states. These distinctive results from a typical poly-Si TFTs are systematically investigated for c-Si TFTs having ECR- PECVD and LPCVD SiO2 gate insulator.



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1. Sameshima, T., Usui, S., and Sekiya, M., “XeCl excimer laser annealing used in the fabrication of Poly-Si TFTs,” IEEE Electron Device Lett. vol. EDL–7, no.5, p.276, 1986.
2. Crowder, M.A., Moriguchi, M., Mitani, Y., Voutas, A.T., “Parametric investigation of SLS- processed poly-silicon thin film for TFT application”, Thin Solid Films 427 (2003) p.101107.
3. Wilt, P.C. Van der, Dijk, B.D. van, Bertens, G.J., Ishihara, R. and Beenakker, C.I.M., “formation of location crystalline islands using substrate embedded seeds in excimer-laser crystallization silicon film”, Appl. Phys. Lett. 79, 1819 (2001).
4. Ishihara, R., Wilt, P.C. Van der, Dijk, B.D. van, Metselaar, J.W. and Beenakker, C.I.M., “Property of single crystalline Si TFT fabricated by [.proportional]-Czochralski (grain-filter) process”, Proc. of SPIE, Vol. 5004 (2003) Pg.1019
5. Kim, Chul Ha, Sohn, Ki-Soo and Jang, Jin, “Temperature dependent leakage current in polycrystalline silicon thin film transistors” J. Appl. Phys. 81 (12), 15 June 1997.
6. Ishihara, R., Wilt, P.C van der, Dijk, B.D. van, Burtsev, A., Metselaar, J.W. and Beenakker, C.I.M., Hiroshima, Y., Abe, D., Higashi, S., Inoue, S., Shimoda, T., “Single-crystalline Si thin film transistors with electron cyclotron resonance plasma enhanced chemical vapor deposited SiO2 ” Proceedings of Eurodisplay 2002, Pg.407
7. Groeseneken, G., Colinge, J., Maes, H.E., Alderman, J.C., Holt, S., “Temperature dependence of threshold voltage in thin film SOI MOSFET's” IEEE Electron Device Lett. vol.11 No.8, p.329, 1990.
8. Sze, S. M., Physics of Semiconductor Devices, 2nd ed. New York: John Wiley & Sons, Inc., 1981
9. , Ching-Fa, Lin, Shyue-Shyh, Yang, Tzung-Zu, Chen, Chun-Lin and Yang, Yu-Chi, “Performance and off-state current mechanisms of low-temperature processed polysilicon thin-film transistors with liquid phase deposited SiO2 gate insulator”, in IEEE Transactions on Electron Devices Vol.41, NO. 2 (Feb. 1994) 173


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