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Temperature Dependence of Structure, Transport and Growth of Microcrystalline Silicon: Does Grain Size Correlate with Transport?

Published online by Cambridge University Press:  25 February 2011

C. C. Tsai ,
G. B. Anderson ,
B. Wacker ,
R. Thompson  and
C. Doland
C. C. Tsai
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
G. B. Anderson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
B. Wacker
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
R. Thompson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
C. Doland
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

The temperature dependence of the growth, structure and transport of plasma-deposited microcrystalline and polycrystalline silicon films have been investigated over the temperature range of 50°C to 350°C. While low substrate temperature yields small grain sizes as expected, high temperature also tends to suppress the grain growth, contrary to the normal behavior observed in thermal CVD (chemical vapor deposition) where crystallinity grows with temperature. In fact, the highest temperature of 350°C corresponds to the lowest degree of crystallinity. Furthermore, it is found that, unlike the polycrystalline Si prepared by thermal CVD, the transport properties of the Si films do not necessarily correlate with the grain size or structural defects. While the largest average grain size of 800–1000 Å was obtained at 200°C, the highest Hall mobility and conductivity were obtained near 250°C, which corresponds to a material with smaller grains and an abundance of voids.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 297
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Usui, S. and Kikuchi, M., J. Non-Cryst. Solids 34, 1 (1979).Google Scholar
2. Matsuda, A., Yamasaki, S., Nakagawa, K., Okushi, H., Tanaka, K., lizima, S., Matsumara, M. and Yamamoto, H., Japan J. Appl. Phys. 19, L305 (1980).Google Scholar
3. Hamasaki, T., Kurata, H., Hirose, M. and Osaka, Y., Appl. Phys. Lett. 37, 1084 (1980).Google Scholar
4. Spear, W. E., Willeke, G., LeComber, P. G. and Fitzgerald, A. G., J. de Physique 42, C4–257 (1981).Google Scholar
5. Tsai, C. C., Thompson, R., Doland, C., Ponce, F. A., Anderson, G. B. and Wacker, B., in Amorphous Silicon Technology, edited by Madan, A., Thompson, M. J., Taylor, P. C., LeComber, P. G. and Hamakawa, Y. (Mat. Res. Soc. Symp. Proc. 118, Pittsburgh, PA 1988), p.49.Google Scholar
6. Tsai, C. C., in Amorphous Silicon and Related Materials, edited by Fritzsche, H. (World Scientific Publishing, Singapore, 1989), Vol.1, p.123.Google Scholar