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Temperature Dependence of Optical Properties of AlAs, Studied by In Situ Spectroscopic Ellipsometry

Published online by Cambridge University Press:  25 February 2011

Huade Yao ,
Paul G. Snyder ,
Kathleen Stair  and
Thomas Bird
Huade Yao
Affiliation:
University of Nebraska, Center for Microelectronic and Optical Materials Research, and Department of Electrical Engineering, Lincoln, NE 68588–0511
Paul G. Snyder
Affiliation:
University of Nebraska, Center for Microelectronic and Optical Materials Research, and Department of Electrical Engineering, Lincoln, NE 68588–0511
Kathleen Stair
Affiliation:
Amoco Research Center, Naperville, IL 60566
Thomas Bird
Affiliation:
Amoco Research Center, Naperville, IL 60566
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Abstract

The dielectric functions ε = ε1+iε2 of AlAs were determined from 1.5 eV to 5.0 eV, by spectroscopie ellipsometry (SE), from room temperature (RT) to ∼577 °C in an ultrahigh vacuum (UHV) chamber. Molecular beam epitaxy (MBE)-grown AlAs was covered by a thin GaAs layer, which was passivated by arsenic capping to prevent oxidation. The arsenic cap was desorbed inside the UHV chamber. SE measurements of the unoxidized sample were made, at various temperatures. Temperature dependent optical constants of AlAs were obtained by mathematically removing the effects of the GaAs cap and substrate. Quantitative analyses of the variations of critical-point energies with temperature, by using the harmonic oscillator approximation (HOA), indicate that the E1 and E1+Δ1 energies decrease -350 meV as temperature increases from RT to 500 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 481
Copyright
Copyright © Materials Research Society 1992

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References

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