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Temperature Dependence of Critical Thickness for Two Dimensional Growth of GexSi1−x on Si Substrate

Published online by Cambridge University Press:  22 February 2011

Xun Wang ,
G. L. Zhou ,
T. C. Zhou ,
C. Sheng  and
M. R. Yu
Xun Wang
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai, CHINA
G. L. Zhou
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai, CHINA
T. C. Zhou
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai, CHINA
C. Sheng
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai, CHINA
M. R. Yu
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai, CHINA
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Abstract

For obtaining good structural perfection, the molecular beam epitaxial (MBE) growth of GexSi1−x on Si substrate should not only be kept in the pseudomorphic form but also in layer-by-layer growth stage. We found that the two dimensional layer-by-layer growth of GexSi1−x on Si could persist to a certain deposition thickness, beyond that the transition to islanding growth occurs. The transition thickness is significantly dependent on the growth temperature and germanium content, and is always smaller than the critical thickness of pseudomorphic growth. In order to obtain good crystalline quality in growing GexSi1−x superlattices on Si substrates, the thickness of GexSi1−x layers should be controlled below the transition thickness and lower growth temperature is favorable.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 241
Copyright
Copyright © Materials Research Society 1991

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References

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