In this work, we investigate the effects that alternating stress has on the structural quality of chemical beam epitaxy grown InP/GaAs/GaP/GaAS superlattices. Grown on GaAs (100), InP has a lattice mismatch of +3.9% whereas that of GaP grown under the same conditions is -3.7%. We have shown in previous work  that it is possible to use the principle of strain balancing to achieve highly coherent, electronically active, structures. We use TEM to first evaluate the critical thickness of GaP/GaAs and InP/GaAs heterolayers, then proceed with an extensive structural study of strain compensated structures. Misoriented substrates were also chosen to intentionally induce dislocations, allowing us to observe their structure without changing the overall strain conditions.