The effect of excess silicon on the growth and microstructure of cosputtered TiSi 2 was investigated. Cosputtered films, with Si/Ti ratios between 2.5 and 4.5, were deposited on (100) Si substrates and reacted at temperatures from 650° to 1050°C. Excess Si in the asdeposited films formed a layer of epitaxial Si on the Si substrate. In addition, Si and SiO2 precipitates formed within the grains. The films became discontinuous when reacted at 1050°C.