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Tem Studies of Cosputtered Tisi 2 Films Containing Excess Silicon.

  • R. Beyers (a1), R. Sinclair (a1) and M. E. Thomas (a2)

Abstract

The effect of excess silicon on the growth and microstructure of cosputtered TiSi 2 was investigated. Cosputtered films, with Si/Ti ratios between 2.5 and 4.5, were deposited on (100) Si substrates and reacted at temperatures from 650° to 1050°C. Excess Si in the asdeposited films formed a layer of epitaxial Si on the Si substrate. In addition, Si and SiO2 precipitates formed within the grains. The films became discontinuous when reacted at 1050°C.

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1. Murarka, S. P., J. Vac. Sci. Technol, 17, 775 (1980).
2. Lew, P., Ph.D. Thesis, Stanford University, Stanford, CA (1983).

Tem Studies of Cosputtered Tisi 2 Films Containing Excess Silicon.

  • R. Beyers (a1), R. Sinclair (a1) and M. E. Thomas (a2)

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