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TEM Observation of Microstructural Change of Silicon Single Crystal Caused by Scratching Tests Using SPM

Published online by Cambridge University Press:  01 February 2011

M. Takagi
Affiliation:
Department of Mechanical Engineering, Aichi Institute of Technology, Toyota 470–0392, Japan
K. Onodera
Affiliation:
Graduate School, Aichi Institute of Technology, Toyota 470–0392, Japan
H. Iwata
Affiliation:
Department of Electrical and Electronics Engineering, Aichi Institute of Technology, Toyota 470–0392, Japan
T. Imura
Affiliation:
Department of Mechanical Engineering, Aichi Institute of Technology, Toyota 470–0392, Japan
K. Sasaki
Affiliation:
Department of Quantum Engineering, Nagoya University, Nagoya 464–8603, Japan
H. Saka
Affiliation:
Department of Quantum Engineering, Nagoya University, Nagoya 464–8603, Japan
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Abstract

In this study, the microstructural change of the surface of Si single crystal (Si(100)) after the scratching tests under very small loading forces was investigated. At first, line-scratching tests and scanning-scratching tests were carried out using an atomic force/friction force microscope (AFM/FFM). Next, cross-sectional TEM observations of the wear marks which were generated by the scratching tests were carried out. As a result of the TEM observations after the line-scratching tests, it was found that dislocations were observed in the area of less than 100nm thickness from the surface of the wear marks which were formed under the loading forces of more than 5μN. In the case of the loading forces of more than 20μN, an amorphous region was also observed just under the wear marks. As a result of the TEM observations after the scanning-scratching tests, it was found that the introduction of dislocations took place and no amorphous region appeared. It was also found that the several atomic layers at the top surface of the wear marks shifted in parallel to (100).

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

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