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Tem Investigations of CdTe/GaAs(001) Interfaces

  • J.E. Angelo (a1), W.W. Gerberich (a2), G. Bratina (a3), L. Sorba (a3), A. Franciosi (a2) (a3) and M.J. Mills (a1)...

Abstract

In this study, cross-sectional transmission electron microscopy (XTEM) was used to investigate the defect structure at the interface between CdTe(001) and GaAs(001) as well as CdTe(1 11) and GaAs(001). The heterostructures were fabricated by molecular beam epitaxy on GaAs(001) buffer layers grown in-situ by molecular beam epitaxy. The defect structure at the as-deposited CdTe(001)/GaAs(001) interface consists of both dislocations and planar faults. The planar faults are both microtwins and stacking faults. It is found that annealing of the film ex-situ causes a restructuring of the CdTe near the interface, with the microtwins being completely removed upon annealing to 450°C for 100 hours. The CdTe(111)/GaAs(001) thin film structure consists of a large number of microtwins parallel to the growth direction. This twinned structure is shown to be related to the relaxation of a residual misfit strain normal to the twin direction. Possible mechanisms for the relaxation are discussed.

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Tem Investigations of CdTe/GaAs(001) Interfaces

  • J.E. Angelo (a1), W.W. Gerberich (a2), G. Bratina (a3), L. Sorba (a3), A. Franciosi (a2) (a3) and M.J. Mills (a1)...

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