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A Tem Investigation of the Initial Stages of InSb Growth on GaAs (001) by Molecular Beam Epitaxy

  • X. Zhang (a1), A.E. Staton-Bevan (a1) and D.W. Pashley (a1)

Abstract

This investigation focuses attention on the very early stages of MBE growth of InSb on GaAs (001). Both conventional and high resolution TEM have been used for a study of InSb layers varying between 5 and 300 monolayers in average thickness. The observations provide conclusive evidence of 3D nucleation and island growth. Complete lattice relaxation is brought about by a network of 1/2 <110> Lomer dislocations at the InSb/GaAs interface and there is strong evidence for the presence of an additional sphalerite interfacial phase. Threading dislocations and planar defects in the InSb epilayer are mainly introduced during island coalescence.

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A Tem Investigation of the Initial Stages of InSb Growth on GaAs (001) by Molecular Beam Epitaxy

  • X. Zhang (a1), A.E. Staton-Bevan (a1) and D.W. Pashley (a1)

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