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TEM Analysis of Long-Period Superstructures in TiAl Single Crystal with Composition Gradient

Published online by Cambridge University Press:  26 February 2011

S. Hata ,
K. Shiraishi ,
N. Kuwano ,
M. Itakura ,
Y. Tomokiyo ,
T. Nakano  and
Y. Umakoshi
S. Hata
Affiliation:
Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816–8580, Japan
K. Shiraishi
Affiliation:
Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816–8580, Japan
N. Kuwano
Affiliation:
Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816–8580, Japan
M. Itakura
Affiliation:
Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816–8580, Japan
Y. Tomokiyo
Affiliation:
Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816–8580, Japan
T. Nakano
Affiliation:
Department of Materials Science and Engineering & Handai Frontier Research Center, Graduate School of Engineering, Osaka University, Suita, Osaka 565–0871, Japan
Y. Umakoshi
Affiliation:
Department of Materials Science and Engineering & Handai Frontier Research Center, Graduate School of Engineering, Osaka University, Suita, Osaka 565–0871, Japan
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Abstract

The ordering mechanism of long-period superstructures (LPSs) in Al-rich Ti-Al alloys was studied using a TiAl single crystal with a composition gradient. A TiAl single crystal with gradient compositions from 55 to 75 at.% Al was prepared by annealing in a molten Al at 1234°C. The single crystal exhibits long-period ordering into different LPSs depending on the Al concentration as follows: an Al5Ti3 type short-range order, h-Al2Ti and one-dimensional antiphase domain structures. These LPSs show an orientation relationship in which Al (002) layers of the LPSs are parallel to those of the TiAl matrix. The atomic arrangements of the LPSs are characterized in common as the alternate stacking of the Al (002) layers and Ti-Al (002) layers. It is thus concluded that the ordering of this type of LPSs and the phase transition between these LPSs are explained as structural changes in Ti-Al (002) layers of the Al-rich L10-TiAl crystal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 842: Symposium S – Integrative and Interdisciplinary Aspects of Intermetallics , 2004 , S7.5
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Miida, R., Hashimoto, S. and Watanabe, D., Jpn. J. Appl. Phys. 21, L59 (1982).Google Scholar
2. Miida, R., Hashimoto, S. and Watanabe, D., Jpn. J. Appl. Phys. 18, L707 (1980).Google Scholar
3. Loiseau, A., Lasalmonie, A., Van Tendeloo, G., Van Landuyt, J. and Amelinckx, S., Acta Cryst. B41, 441 (1985).Google Scholar
4. Kulkarni, U. D., Acta Mater. 46, 1193 (1998).Google Scholar
5. Kulkarni, U. D., Phil. Mag. A 82, 1017 (2002).Google Scholar
6. Nakano, T., Negishi, A., Hayashi, K. and Umakoshi, Y., Acta Mater. 47, 1091 (1999).Google Scholar
7. Nakano, T., Hayashi, K. and Umakoshi, Y., Phil. Mag. A 82, 763 (2002).Google Scholar
8 Lei, C., Xu, Q. and Sun, Y.-Q., Mater. Sci. Eng. A313, 227 (2001).Google Scholar
9. Stein, F., Zhang, L. C., Sauthoff, G. and Palm, M., Acta Mater. 49, 2919 (2001).Google Scholar
10. Palm, M., Zhang, L. C., Stein, F. and Sauthoff, G., Intermetallics 10, 523 (2002).Google Scholar
11. Zhang, L. C., Palm, M., Stein, F. and Sauthoff, G., Intermetallics 9, 229 (2001).Google Scholar
12. Loiseau, A. and Vannuffel, C., Phys. Stat. Sol. (a) 107, 655 (1988).Google Scholar
13. Loiseau, A., Van Tendeloo, G., Portier, R. and Ducastelle, F., J. Physique 46, 595 (1985).Google Scholar
14. Miida, R., Jpn. J. Appl. Phys. 25, 1815 (1986).Google Scholar
15. Kainuma, R., Palm, M. and Inden, G., Intermetallics 2, 321 (1994).Google Scholar
16. Miyazaki, T., Koyama, T. and Kobayashi, S., Metall. Mater. Trans. 27A, 945 (1996).Google Scholar
17. Ikeda, T., Kadowaki, H., Nakajima, H., Inui, H., Yamaguchi, M. and Koiwa, M., Mater. Sci. Eng. A312, 155 (2001).Google Scholar
18. Ikeda, T., Kadowaki, H. and Nakajima, H., Acta Mater. 49, 3475 (2001).Google Scholar
19. Hata, S., Higuchi, K., Itakura, M., Kuwano, N., Nakano, T., Hayashi, K. and Umakoshi, Y., Phil. Mag. Lett. 82, 363 (2002).Google Scholar
20. Hata, S., Higuchi, K., Mitate, T., Itakura, M., Tomokiyo, Y., Kuwano, N., Nakano, T., Nagasawa, Y. and Umakoshi, Y., J. Electron Microsc. 53, 1 (2004).Google Scholar