Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-26T12:30:34.708Z Has data issue: false hasContentIssue false
  • English
  • Français

Technological Prospects for Germanium Silicide Epitaxy

Published online by Cambridge University Press:  21 February 2011

John C. Bean
John C. Bean*
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
Get access

Abstract

This paper describes preliminary device work on GexSi1−x, based devices and examines progress towards the realization of a silicon based heterostructure technology. Target areas for further work are identified including: An enhanced understanding of metastable-growth processes; The need for defect confinement in discommensurate epitaxy; Elimination of manufacturing barriers caused by particulate induced defects in MBE and low growth rates in low temperature CVD.

Over the last five years, studies of GexSi1−x have yielded an understanding of crystal growth mechanisms and information on electrical and optical properties such as bandstructure and heterojunction band alignment. These in turn lead to a number of preliminary device applications including optical detectors, modulation doped transistors and heterojunction bipolar transistors. In this paper, I will try to answer the question posed by the symposium organizers: In the germanium silicide system, has our understanding and experience reached the point that we have the basis for a technology, and if not, where must further work be done?

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 111
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] For a review see: Bean, J. C., Silicon Based Semiconductor Heterostructures, Chapter 9 in Silicon Molecular Beam Epitaxy, Vol. II, Kasper, E. and Bean, J. C. Eds., CRC Press, Boca Raton, Fla. (1988).Google Scholar
[2] Bean, J. C., Sheng, T. T., Feldman, L. C., Fiory, A. T. and Lynch, R. T., Appl. Phys. Lett. 44, 102 (1984).Google Scholar
[3] Bean, J. C., Feldman, L. C., Fiory, A. T., Nakahara, S. and Robinson, I. K., J. Vac. Sci. Technol. A2, 436 (1984).Google Scholar
[4] Gronet, C., Stanford University, Private Communication.Google Scholar
[5] Frank, F. C. and van der Merwe, J. H., Proc. Roy. Soc. A198, 205 (1949).Google Scholar
[6] Frank, F. C. and van der Merwe, J. H., Proc. Roy. Soc. A198, 216 (1949).Google Scholar
[7] Frank, F. C. and van der Merwe, J. H., Proc. Roy. Soc. A200, 125 (1949).Google Scholar
[8] For an overview of Matthew's work see Matthews, J. W., J. Vac. Sci. Technol. 12, 126 (1975).Google Scholar
[9] People, R., Phys. Rev. B 32, 1405 (1985).Google Scholar
[10] People, R. and Bean, J. C., Appl. Phys. Lett. 48, 538 (1986).Google Scholar
[11] People, R., Lang, D. V. and Bean, J. C., p. 767, Proc. 18th Int. Conf. on the Physics of Semiconductors, Stockholm (1986) World Scientific Press, Singapore (1987).Google Scholar
[12] Abstreiter, G., Brugger, H., Wolf, T., Jorke, H. and Herzog, H. -J., Phys. Rev. Lett. 54, 2441 (1985).Google Scholar
[13] Luryi, S., Pearsall, T. P., Temkin, H. and Bean, J. C., IEEE Elec. Dev. Lett. EDL–7, 104 (1986).Google Scholar
[14] Pearsall, T. P., Temkin, H., Bean, J. C. and Luryi, S., IEEE Elec. Dev. Lett. EDL–7, 330 (1986).CrossRefGoogle Scholar
[15] Temkin, H., Pearsall, T. P., Bean, J. C., Logan, R. A. and Luryi, S., Appl. Phys. Lett. 48, 963 (1986).CrossRefGoogle Scholar
[16] Temkin, H., Bean, J. C., Pearsall, T. P., Olsson, N. A. and Lang, D. V., Appl. Phys. Lett. 49, 155 (1986).Google Scholar
[17] For further information see the 1987 Proceedings of this symposium.Google Scholar
[18] Pearsall, T. P., Bevk, J., Feldman, L. C., Bonar, J. M., Manaerts, J. P. and Ourmazd, A., Phys. Rev. Lett. 58, 729 (1987).CrossRefGoogle Scholar
[19] Hybertsen, M. S., Schluter, M., People, R., Jackson, S. P., Lang, D. V., Pearsall, T. P., Bean, J. C., Vandenburg, Y. and Bevk, J., to be published J. Appl. Phys.Google Scholar
[20] Zunger, A., 2nd Int. Symp. on Si MBE, Honolulu, October 1987.Google Scholar
[21] Pearsall, T. P., Bean, J. C., People, R. and Fiory, A. T., p. 402, Proc. 1st Int. Symp. on Si MBE, J. C. Bean Ed., Electrochemical Soc., Pennington, NJ (1985).Google Scholar
[22] Pearsall, T. P. and Bean, J. C., IEEE Elec. Dev. Lett., EDL–7, 308 (1986).Google Scholar
[23] Daembkes, H., Herzog, H. -J., Jorke, H., Kibbel, H. and Kasper, E., to be published IEEE Trans. on Elec. Dev. ED–33, (1986).Google Scholar
[24] Temkin, H., p. 28, Silicon Molecular Beam Epitaxy II, Bean, J. C. and Schowalter, L. J., Eds., Electrochemical Soc., Pennington, NJ (1988).Google Scholar
[25] Iyer, S. S., Patton, G. L., Delage, S. L., Tiwari, S. and Stork, J. M. C., p. 114, IBID.Google Scholar
[26] Tatsumi, T., Hirayama, H. and Aizaki, N., Appl. Phys. Lett. 52, 895 (1988).Google Scholar
[27] Temkin, H., Bean, J. C., Antreasyan, A. and Leibenguth, R., Appl. Phys. Lett. 52, 1089 (1988).Google Scholar
[28] Iyer, S. S., to be published IEEE Elec. Dev. Lett.Google Scholar
[29] Fritz, I. J., Appl. Phys. Lett. 51, 1080 (1987).Google Scholar
[30] Fiory, A. T., Bean, J. C., Hull, R. and Nakahara, S., Phys. Rev. B21, 1860 (1985).Google Scholar
[31] Dodson, B. W. and Tsao, J. Y., Appl. Phys. Lett. 51, 1325 (1987).Google Scholar
[32] Kohama, Y., Fukuda, Y. and Seki, M., Appl. Phys. Lett. 52, 380 (1988).Google Scholar
[33] Matthews, J. W. and Blakeslee, A. E., J. Cryst. Growth 27, 118 (1974) and 32, 265 (1974).Google Scholar
[34] Bean, J. C. and Butcher, P., p. 427, Silicon Molecular Beam Epitaxy, Electrochemical Soc., Pennington, NJ (1985).Google Scholar
[35] Bean, J. C., Industrial Application: Possible Approaches, Chap. 14, in Silicon Molecular Beam Epitaxy, Vol. II, Kasper, E. and Bean, J. C. Eds., CRC Press, Boca Raton, Fla (1988).Google Scholar
[36] Bean, J. C. and Leibenguth, R. E., p. 603, Silicon Molecular Beam Epitaxy II, Bean, J. C. and Schowalter, L. J. Eds., Electrochemical Soc., Pennington, NJ (1988).Google Scholar
[37] Bellevance, D., Industrial Application: Perspective and Requirements, Chapt. 13 in Silicon Molecular Beam Epitaxy, Vol. II, Kasper, E. and Bean, J. C. Eds., CRC Press, Boca Raton, Fla. (1988).Google Scholar
[38] Matteson, S. and Bowling, R. A., to be published J. Vac. Sci. Technol.Google Scholar
[39] Donahue, T. J., Burger, W. R. and Reif, R., Appl. Phys. Lett. 44, 348 (1984) and references therein.Google Scholar
[40] Meyerson, B. S., LeGoues, F. K., Nguyen, T. N. and Harawe, D. L., Appl. Phys. Lett. 50, 113 (1987) and references therein.Google Scholar