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Techniques of Insulator/Semiconductor Heterostructure Specimen Preparation

  • D. Bahnck (a1), J. L. Batstone (a1) and Julia M. Phillips (a1)

Abstract

Techniques for the preparation of specimens for Transmission Electron Microscopy analysis are described. Cross-sectional specimens of insulator/semiconductor heterostructures have been successfully prepared. The problem of differential thinning rates and interface amorphization during argon ion-milling have been overcome using low argon ion accelerating voltages and shallow angles of incidence. Techniques for preparation of plan view specimens include the preparation of silicon substrates for in-situ crystal growth in an ultrahigh vacuum Transmission Electron Microscope.

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