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A Technique for Preparing Transmission Electron Microscope Specimens Using Cleavage

Published online by Cambridge University Press:  21 February 2011

T. Boone
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. Nakahara
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

A technique for observing both plan view and cross sections of a specimen directly in a transmission electron microscope (TEM) without relying on a tedious thinning operation was developed. This technique involves cleaving a specimen perpendicular to the plane, so that the thin (electron transparent) section of the cleaved edge can be directly imaged by TEM. The only limitations of this technique are that a specimen must be readily criacked or cleaved and that, since the transparent region is often bounded by a 90° corner, the extent of electron transparent region is somewhat localized. Nevertheless, the technique has the advantages of the ease of specimen preparation, and the absence of contamination or damage introduced in other conventional thinning methods. The geometry of the cleaved specimen is also suitable for reflection electron microscopy.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

[1] Marcus, R. B. and Sheng, T. T., Transmission Electron Microscopy of Silicon VLSI Circuits and Structures (Wiley, New York, 1983).Google Scholar
[2] Chang, C. C., Fraser, D. B., Grieco, M. J., Sheng, T. T., Haszko, S. E., Kerwin, R. E., Marcus, R. B., and Sinha, A. K., J. Electrochem. Soc. 125, 787 (1978).Google Scholar
[3] Kakibayashi, H. and Nagata, F., Japan. J. Appl. Phys. 24, L905 (1985).Google Scholar
[4] Eaglesham, D. J., Hetherington, C. J. D., and Humphreys, C. J., Mat. Res. Soc. Symp. Proc. Vol.77, p. 473 (1987).Google Scholar
[5] De Cooman, B. C., Kuesters, K. -H., Carter, C. B., Hsu, T., and Wicks, G., Phil. Mag. A 50, 849 (1984).CrossRefGoogle Scholar
[6] Yamamoto, N. and Muto, S., Jap. J. Appl. Phys. 23, L806 (1984).Google Scholar
[7] Hsu, T., J. Vac. Sci. Techn. B3, 1035 (1985).Google Scholar