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TCAD Modeling of Metal Induced Lateral Crystallization of Amorphous Silicon

Published online by Cambridge University Press:  01 February 2011

Aleksey M. Agapov ,
Valeri V. Kalinin ,
Alexandre M. Myasnikov ,
Vincent M.C. Poon  and
Bert Vermeire
Aleksey M. Agapov
Affiliation:
Institute of Semiconductors Physics, 13 Lavrent'ev Avenue, Novosibirsk, Russia 630090
Valeri V. Kalinin
Affiliation:
Institute of Semiconductors Physics, 13 Lavrent'ev Avenue, Novosibirsk, Russia 630090
Alexandre M. Myasnikov
Affiliation:
Institute of Semiconductors Physics, 13 Lavrent'ev Avenue, Novosibirsk, Russia 630090 On leave from Institute of Semiconductors Physics, 13 Lavrent'ev Avenue, Novosibirsk, Russia 630090
Vincent M.C. Poon
Affiliation:
Hong Kong University of Science and Technology, Kowloon, Hong Kong
Bert Vermeire
Affiliation:
Ridgetopt Group, Inc., 6595 N.Oracle Road, Tucson, AZ 85704-5645, U.S.A.
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Abstract

In our previous publications [1, 2] nickel diffusion and spreading resistance probe (SRP) measurements for quality control of metal induced lateral crystallization (MILC) of amorphous silicon (a-Si) were studied. Now we present TCAD modeling and an explanation of experimental results. By using ISE TCAD the Ni concentration distributions were calculated and compared with results obtained by experiments using SIMS analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A6.6
Copyright
Copyright © Materials Research Society 2005

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References

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