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Synthesis of Resistive Memory Oxides by Ion Implantation

  • S.M. Bishop (a1), Z.P. Rice (a1), B.D. Briggs (a1), H. Bakhru (a1) and N.C. Cady (a1)...

Abstract

In this work, we report on the use ion of implantation to synthesize resistive memory oxides. The surface of copper thin films was converted to copper oxide using oxygen implantation. Devices fabricated from the copper oxide (CuxO) layers exhibited unipolar switching behavior without the need for a forming voltage. Technology scaling was demonstrated by oxygen implanting copper damascene vias. Unipolar switching was observed in via-based devices down to 48 nm. The current-voltage data of devices scaled from 100 μm to 48 nm suggests that the RESET transition is related to localized Joule heating. Tantalum oxide (TaxOy) was also created by oxygen implantation but exhibited bipolar resistive switching. Analysis of the conduction suggests that the difference between the two resistance states in these devices is largely due to a lowering of the Pt-TaxOy Schottky barrier.

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Keywords

Synthesis of Resistive Memory Oxides by Ion Implantation

  • S.M. Bishop (a1), Z.P. Rice (a1), B.D. Briggs (a1), H. Bakhru (a1) and N.C. Cady (a1)...

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