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Synthesis of MOS2 Phase in the Near Surface Region of Al2O3 and ZrO2 by Ion Implantation

Published online by Cambridge University Press:  25 February 2011

A.K. Rai ,
R.S. Bhattacharya ,
S.C. Rung  and
D. Patrizio
A.K. Rai
Affiliation:
Universal Energy Systems, Inc., 4401 Dayton-Xenia Rd., Dayton, OH 45432
R.S. Bhattacharya
Affiliation:
Universal Energy Systems, Inc., 4401 Dayton-Xenia Rd., Dayton, OH 45432
S.C. Rung
Affiliation:
Universal Energy Systems, Inc., 4401 Dayton-Xenia Rd., Dayton, OH 45432
D. Patrizio
Affiliation:
Universal Energy Systems, Inc., 4401 Dayton-Xenia Rd., Dayton, OH 45432
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Abstract

Al2O3 and ZrO2 substrates were coimplanted with 175 keV Mo+ and 74 keV S+ at doses of 1×10 cm−2 and 2×1017 cm−2 respectively. The energies of Mo+ and S+ ions were chosen to provide a nearly overlapping depth profiles in both substrates. Rutherford backscattering (RBS), Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) techniques were used for characterization. The as implanted surface of Al2O3 became amorphous while as implanted ZrO2 surface remained crystalline. The MoS2 phase was observed in the as implanted ZrO2. The MoS2 phase was observed in the implanted region of Al2O3 and ZrO2 after furnace annealing at 700°C. Thermodynamic calculations were performed to predict the equilibrium binary phase formed in Al2O3 and ZrO2 under the present implant and annealing conditions. The predictions agree with the experimental findings.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 549
Copyright
Copyright © Materials Research Society 1990

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References

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