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Synthesis of III-N x -V 1-x Thin Films by N Ion Implantation

  • K. M. Yu (a1), W. Walukiewicz (a1), W. Shan (a2), J. Wu (a1), J. W. Beeman (a1), J. W. Ager (a1), E. E. Haller (a1) and M. C. Ridgway (a3)...

Abstract

Dilute III-N x -V 1-x alloys were successfully synthesized by nitrogen implantation in GaAs and InP. The fundamental band gap energy for the ion beam synthesized III-N x -V 1-x alloys was found to decrease with increasing N implantation dose in a manner similar to that commonly observed in epitaxially grown GaN x As 1-x and InN x P 1-x thin films. The fraction of N occupying anion sites (“active” N) in the GaN x As 1-x layers formed by N implantation was thermally unstable and decreased with increasing annealing temperature. In contrast, thermally stable InN x P 1-x alloys with N mole fraction as high as 0.012 were synthesized by N implantation in InP. Moreover, the N activation efficiency in InP was at least a factor of two higher than in GaAs under similar processing conditions. The low N activation efficiency (<20%) in GaAs can be improved by co-implanting Ga and N in GaAs.

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Synthesis of III-N x -V 1-x Thin Films by N Ion Implantation

  • K. M. Yu (a1), W. Walukiewicz (a1), W. Shan (a2), J. Wu (a1), J. W. Beeman (a1), J. W. Ager (a1), E. E. Haller (a1) and M. C. Ridgway (a3)...

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