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Synthesis of CdSe/ZnS Quantum Dot Composites for Electroluminescent Devices

Published online by Cambridge University Press:  10 February 2011

J. Rodriguez-Viejo ,
B. O. Dabbousi ,
M. G. Bawendi  and
K. F. Jensen
J. Rodriguez-Viejo
Affiliation:
Chemical Engineering, Cambridge, Massachusetts 02139.
B. O. Dabbousi
Affiliation:
Massachusetts Institute of Technology, Departments of Chemistry
M. G. Bawendi
Affiliation:
Massachusetts Institute of Technology, Departments of Chemistry
K. F. Jensen
Affiliation:
Chemical Engineering, Cambridge, Massachusetts 02139.
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Extract

Quantum dot composite films, consisting of II-VI nanocrystals imbedded in a ZnS matrix, are candidate phosphor materials for electroluminescent flat panel displays. The optical properties of such composites can be tailored across the visible spectral region by selecting the composition and size of the nanocrystals. We present combined solution chemistry and electrospray organometallic chemical vapor deposition (ES-OMCVD) methods for realizing such composites. Size selected, CdSe quantum dots with an overlayer of ZnS are synthesized in solution. This surface derivatization produces a large enhancement of the photoluminescence efficiency. The quantum dot composites are subsequently formed by introducing the quantum dot solution by electrospray into an OMCVD ZnS thin film process. Photoluminescence and cathodoluminescence properties of the quantum dot composites are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 477
Copyright
Copyright © Materials Research Society 1997

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References

1. Brus, L., Appl. Phys., A 53, 465 (1991).Google Scholar
2. Murray, C. B., Norris, D.J., Bawendi, M. G., J.Am.Chem.Soc., 115, 8706 (1993).Google Scholar
3. Hines, M. A., Guyot-Sionnest, P. J.Phys.Chem., 100, 468 (1996).Google Scholar
4. Danek, M., F.Jensen, K., Murray, C. B., Bawendi, M.G. Appl. Phys. Lett., 65, 2795 (1994).Google Scholar
5. Danek, M., Jensen, K. F., Murray, C. B., Bawendi, M.G., Chem. of Mater., 8, 173 (1996).Google Scholar
6. Katari, J.E.Bowen, Colvin, V.L., Alivisatos, A.P., J.Phys.Chem., 98, 4109 (1994).Google Scholar
7. Dabbousi, B.O., Bawendi, M.G., Onitsuka, O., Rubner, M.F, Appl. Phys. Lett., 66 1316 (1995).Google Scholar