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Synthesis of Buried Silicon Compounds Using Ion Implantation

Published online by Cambridge University Press:  26 February 2011

Alice E. White ,
K. T. Short ,
R. C. Dynes ,
J. M. Gibson  and
R. Hull
Alice E. White
Affiliation:
AT&T Bell Laboratories Murray Hill, NJ 07974
K. T. Short
Affiliation:
AT&T Bell Laboratories Murray Hill, NJ 07974
R. C. Dynes
Affiliation:
AT&T Bell Laboratories Murray Hill, NJ 07974
J. M. Gibson
Affiliation:
AT&T Bell Laboratories Murray Hill, NJ 07974
R. Hull
Affiliation:
AT&T Bell Laboratories Murray Hill, NJ 07974
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Abstract

Ion implantation is widely used for doping semiconductors at low concentration, but, with the advent of a new generation of high current implanters, synthesizing new materials rather that simply doping them has become feasible. This technique has been successfully applied to fabricating silicon-on-insulator (SOI) structures with oxygen and nitrogen for several years. Since we are interested in understanding the mechanisms of formation of these layers, we have concentrated on sub-stoichiometric implantation doses of oxygen where it is easier to observe the coalescing layer. In order to determine whether this process of compound formation is more general, our studies were expanded to include implantation of the transition metals. Here, elevated substrate temperatures are necessary to minimize Si surface damage. The resulting disilicide layers are of remarkably high quality: they are single crystals in registry with the silicon wafer and they have better residual resistivities than comparable UHV-reacted silicides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 3
Copyright
Copyright © Materials Research Society 1988

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References

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