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Synthesis and Properties of Ga x Mn1-xN films

  • R. Zhang (a1), Y. Y. Yu (a1), X. Q. Xiu (a1), Z. L. Xie (a1), S. L. Gu (a1), B. Shen (a1), Y. Shi (a1) and Y. D. Zheng (a1)...


Mn-doped GaN films were grown by hydride vapor phase epitaxy(HVPE). structural measurements show that Mn may substitute Ga atoms in the GaN lattice. Ferromagnetism is observed in these HVPE grown Mn-doped GaN films, which may come from the Ga x Mn1−x N phase in the films.



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