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Synthesis and Properties of Epitaxial Thin Films of c-axis Oriented Metastable Four-Layered Hexagonal BaRuO3

Published online by Cambridge University Press:  10 February 2011

M. K. Lee
Affiliation:
Department of Mechanical Engineering & Materials Science, Duke University, Durham, NC 27708
C. B. Eom
Affiliation:
Department of Mechanical Engineering & Materials Science, Duke University, Durham, NC 27708
W. Tian
Affiliation:
Department of Mechanical Engineering & Materials Science, Duke University, Durham, NC 27708
X. Q. Pan
Affiliation:
Department of Materials Science & Engineering, University of Michigan, Ann Arbor, MI 48109
M. C. Smoak
Affiliation:
Department of Mechanical Engineering & Materials Science, Duke University, Durham, NC 27708
F. Tsui
Affiliation:
Department of Physics & Astronomy, University of North Carolina, Chapel Hill, NC 27599
J. J. Krajewski
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
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Abstract

We have grown epitaxial thin films of metastable four-layered hexagonal (4H) BaRuO3 on (111) SrTiO3 by 90° off-axis sputtering techniques. X-ray diffraction and transmission electron microscopy experiments reveal that the films are single crystals of c-axis 4H structures with an inplane epitaxial arrangement of BaRuO3 [2110] // SrTiO3 [110]. Smooth multilayer growth has been observed in these films with a step height equaling the size of half unit cell. In-plane resistivity of the films is metallic, with a room temperature value of about 810µΩ-cm and slightly curved temperature dependence. Their magnetic susceptibility is paramagnetic. The metastable layered compounds can be very useful for understanding new solid-state phenomena and novel device applications.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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