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Synthesis and Optical Properties of Silicon Oxide Nanowires

  • Bernard Gelloz (a1), Yannick Coffinier (a2), Billel Salhi (a3), Nobuyoshi Koshida (a4), Gilles Patriarche (a5) and Rabah Boukherroub (a6)...

Abstract

The paper reports on the synthesis and structural characterization of amorphous silicon oxide nanowires (SiONWs). The nanowires were prepared using the solid-liquid-solid (SLS) technique and display an average mean diameter in the range of 20-150 nm and 15-20 μm in length. Energy dispersive spectrometry (EDS) analysis revealed that the nanowires consist of Si and O elements in a ratio of approximately 1:2. The result was corroborated by the presence of a single peak at around 103 eV in the X-ray photoelectron (XPS) spectrum. As-prepared SiONWs display blue photoluminescence (PL) centered ∼ 400 nm. The blue luminescence is inhomogeneous with an increase in the PL peak intensity by a factor of 1.8 at certain areas of the surface. Next, we have investigated the effect of high-pressure water vapor annealing (HWA) on the PL and found that while the PL became homogeneous, a decrease of its intensity by a factor 2 was observed. The origin of the blue emission could be attributed to defect centers of oxygen deficiency in the wires.

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Synthesis and Optical Properties of Silicon Oxide Nanowires

  • Bernard Gelloz (a1), Yannick Coffinier (a2), Billel Salhi (a3), Nobuyoshi Koshida (a4), Gilles Patriarche (a5) and Rabah Boukherroub (a6)...

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