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Synthesis and characterization of high quality ferromagnetic Cr-doped GaN and AlN thin films with Curie temperatures above 900K

  • Stephen Y. Wu (a1), H. X. Liu (a1), Lin Gu (a2), R. K. Singh (a1), M. van Schilfgaarde (a1), David J. Smith (a2) (a3), N. R. Dilley (a4), L. Montes (a4), M. B. Simmonds (a4) and N. Newman (a1)...


Reactive MBE growth was used to synthesize ferromagnetic Cr-doped GaN and AlN thin films with Curie temperatures above 900K. 2% Cr-doped GaN and 7% Cr-doped AlN were found to have a saturation magnetization moment of 0.42 and 0.6 μ B /Cr atom, indicating that ∼14% and ∼20% of the Cr, respectively, are magnetically active. Structural characterization using X-ray diffraction (XRD) and transmission electron microscopy (TEM) did not find evidence of a ferromagnetic secondary phase. Electrical characterization indicate that the resistivity of the Cr-doped GaN films depends exponentially on temperature as R=Roexp[(To/T)1/2], characteristic of variable range hopping. In contrast, Cr-doped AlN films are highly resistive. Local spin density functional calculations predict that Cr forms a deep level defect in both systems and the t2 level falls approximately at midgap. Our theoretical and experimental results indicate that ferromagnetism in Cr-doped GaN and AlN arises as a result of the double exchange mechanism within the partially filled Cr t2 band.



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