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Synthesis and Characterization of Ferroelectric Thin Films by KrF Excimer Laser Ablation for Memory Applications

Published online by Cambridge University Press:  15 February 2011

Ashok Kumar  and
M.R. Alam
Ashok Kumar
Affiliation:
Advanced Thin Film Laboratory, Department of Electrical Engineering, EEB 60, University of South Alabama, Mobile, AL 36688
M.R. Alam
Affiliation:
Advanced Thin Film Laboratory, Department of Electrical Engineering, EEB 60, University of South Alabama, Mobile, AL 36688
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Abstract

Pb(ZrxTi1-x)O3 (lead zirconate titanate or PZT) ferroelectric thin film capacitors are of considerable interest for the realization of memory devices such as nonvolatile random access memories (NVRAMs). The PZT capacitors were prepared on platinized silicon Pt/(100)Si using conducting oxide LaxSr1-xCoO3 (lanthanum strontium cobalt oxide or LSCO) as electrodes. The PZT and LSCO thin films were deposited by the KrF excimer laser ablation technique. The optimum preparation conditions such as oxygen pressure, laser energy influence and substrate temperature were investigated. The PZT and LSCO films grown on Pt/(100)Si are polycrystalline. The crystallographic properties of the films were determined using X-ray diffractometer (XRD) method. The electrical characterizations of the films including hysteresis loop, fatigue, and retention properties were determined by the RT66A Standardized Ferroelectric Test System.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 526: Symposium Y – Advances in Laser Ablation of Materials , 1998 , 211
Copyright
Copyright © Materials Research Society 1998

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