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Synchrotron X-Ray Topographic Study of the Behavior of Defects in High Carbon-Content Si Wafers during RTP

  • Thomas Fanning (a1), Michael Dudley (a1), Franklyn F.Y. Wang (a1), David Gordon-Smith (a2) and David T. Hodul (a3)...

Abstract

Czochralski (CZ) grown Si wafers, specially prepared with unusually high carbon content (ranging from 3 to 7 ppma), were subjected to a rapid thermal processing (RTP) treatment at 1050°C for 60s. Synchrotron white beam x-ray topography in transmission geometry was used to study defect structures in these Si wafers, both prior and subsequent to this RTP treatment. Observations of both the partial relaxation of the strain fields of precipitates and widespread nucleation and propagation of dislocations accompanying RTP are presented and discussed. Results are contrasted with those from parallel studies previously conducted on low carbon content wafers.

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