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Synchrotron White Beam Topography Studies of Screw Dislocations in 6H-Sic Single Crystals

Published online by Cambridge University Press:  15 February 2011

S. Wang
Affiliation:
Dept. of Materials Science & Engineering, SUNY, Stony Brook, NY 11794–2275
M. Dudley
Affiliation:
Dept. of Materials Science & Engineering, SUNY, Stony Brook, NY 11794–2275
C. H. Carter Jr.
Affiliation:
Cree Research, Inc., 2810 Meridian Parkway, Durham, NC 27713
V. F. Tsvetkov
Affiliation:
Cree Research, Inc., 2810 Meridian Parkway, Durham, NC 27713
C. Fazi
Affiliation:
U.S.Army Research Laboratory, 2800 Powder Mill Rd., Adelphi, MD 20783.
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Abstract

Synchrotron white beam X-ray topography, along with optical microscopy and scanning electron microscopy, has been used to characterize structural defects which are potentially detrimental to device performance in PVT 6H-SiC single crystals. Line defects running along the [0001] axis, known as “micropipes”, were studied extensively. Detailed analysis of topographic image contrast associated with “micropipes”, based on the kinematical theory of X-ray diffraction, established that the so-called “micropipes” are screw dislocations with large Burgers vectors.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

[1] Tairov, Yu.M. and Tsvetkov, V.F., J. of Cryst. Growth, 52, 146 (1981).Google Scholar
[2] Ziegler, G., Lanig, P., Theis, D. and Weyrich, C., IEEE Trans. Electron. Devices ED–30, 277 (1983).Google Scholar
[3] Davis, R.F., Jr., C.H. Carter, and Hunter, C.E., U.S. Patent 4,866,005 (1989).Google Scholar
[4] Koga, K., Fujikawa, Y., Ueda, Y. and Yamaguchi, T., in Amorphous and Crystalline Silicon Carbide-4, edited by Yang, C.Y., Rahman, M.M. and Harris, G.L., Springer Proceedings in Physics, Vol.71 (Springer-Verlag, Berlin, 1992) pp 96100.Google Scholar
[5rsqb; Takahashi, J., Kanaya, M. and Fujiwara, Y., J. Cryst. Growth, 135, 6170 (1994).Google Scholar
[6] Yang, J.W., Ph.D. Thesis, Case Western Reserve University (1993).Google Scholar
[7] Wang, S., Dudley, M., Jr., C. H. Carter, Asbury, D. and Fazi, C., in Applications of Synchrotron Radiation Techniques to Materials Science Perry, D.L., Shinn, N.D., Stockbauer, R.L., D'Amico, K.L., and Terminello, L.J. (Eds.), Mat. Res. Soc. Symp. Proc., 307, 249 (1993).Google Scholar
[8] Dudley, M., Wang, S., Huang, W., Jr., C.H. Carter, Tsvetkov, V.F. and Fazi, C., J. Phys. D: Appl. Phys. (accepted for publication).Google Scholar
[9] Verma, A.R., Crystal Growth and Dislocations, (Academic Press, New York, 1953).Google Scholar
[10] Mardix, S., Lang, A.R. and Blech, I., Phil. Mag., 24, 683 (1971).Google Scholar
[11] Klapper, H., J. Appl. Cryst. 9, 310 (1976).Google Scholar
[12] Authier, A., J. Phys. Radium, 27, 57 (1966).Google Scholar