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The Symmetry of the EL2 Defect in GaAs

Published online by Cambridge University Press:  25 February 2011

P. Trautman  and
J.M. Baranowski
P. Trautman
Affiliation:
Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
J.M. Baranowski
Affiliation:
Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
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Abstract

Linear dichroism has been measured in the broad absorption band of the EL2 defect in GaAs under uniaxial stress. In addition, the splittings of the EL2 zero phonon line (ZPL) at 8378 cm-1 under uniaxial stress applied along [100], [111], and [110] directions have been measured. Splitting of the ZPL under [100] stress is over one order of magnitude smaller than under [111] stress, on the other hand, the linear dichroism in the broad absorption band is roughly equal for these two directions of stress. This is an evidence for the quenching of the coupling to tetragonal strains due to interaction with trigonal modes of the lattice (the Ham effect). Therefore, it is established, that the excited T2 state of EL2 is a localized state subject to dynamical Jahn-Teller coupling to trigonal modes of the lattice. The possibility that the excited T2 state has hydrogenic nature associated with the L minima is ruled out by the present results. The observed splittings of the ZPL together with polarization selection rules clearly indicate the tetrahedral Td symmetry of the EL2 defect ruling out any other point group in particular trigonal C3v In view of the presented experimental results, their interpretation, and recent theoretical investigations, the isolated arsenic antisite AsGa most successfully accounts for the properties of the neutral charge state of the EL2 defect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 821
Copyright
Copyright © Materials Research Society 1990

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References

1 Kaminska, M., Skowronski, M., and Kuszko, W., Phys. Rev. Lett. 55, 2204 (1985).Google Scholar
2 von Bardeleben, H.J., Stievenard, D., Bourgoin, J.C., and Huber, A., Appl. Phys. Lett. 47, 970 (1985).Google Scholar
3 von Bardeleben, H.J., Stievenard, D., Deresmes, D., Huber, A., Bourgoin, J.C., Phys. Rev. B 34, 7192 (1986).Google Scholar
4 Meyer, B.K., Hofman, D.M., Niklas, J.R., and Spaeth, J.M., Phys. Rev. B36, 1332(1987).Google Scholar
5 Meyer, B.K., Hofmann, D.M., and Spaeth, J.M., J. Phys. C 20, 2445 (1987).Google Scholar
6 Figielski, T. and Wosinski, T., Phys. Rev. B 36, 1269 (1987)Google Scholar
7 Trautman, P., Walczak, J.P., and Baranowski, J.M., accepted for publication in Phys. Rev. B.Google Scholar
8 Skowronski, M., in Defects in Electronic Materials, edited by Stavola, M., Pearton, S.J., and Davies, G. (Mater. Res. Soc. Proc. 104, Pittsburgh, PA 1986) pp. 405–408.Google Scholar
9 Kaminska, M., Skowronski, M., Lagowski, J., Parsey, J.M., and Gatos, H.C., Appl. Phys. Lett. 43, 302 (1983).Google Scholar
10 Schnatterly, S.E., Phys. Rev. 140, A1364 (1965).Google Scholar
11 Kuszko, W., and Kaminska, M., Acta Phys. Pol. A69, 427 (1986).Google Scholar
12 Fuchs, F., and Dischler, B., Appl. Phys. Lett. 51, 2115 (1987).Google Scholar
13 Kuszko, W., Walczak, P.J., Trautman, P., Kaminska, M., Baranowski, J.M., Materials Science Forum 10–12, 317 (1986).Google Scholar
14 Ham, F.S., Phys. Rev. 138, A1727 (1965).Google Scholar
15 Henry, C.H., Schnatterly, S.E., Slichter, C.P., Phys. Rev. 137, A583 (1965).Google Scholar
16 Caner, M., and Engelman, R., J. Chem. Phys. 44. 4054 (1966).Google Scholar
17 Dabrowski, J., and Scheffler, M., Phys. Rev. Lett. 60, 2183 (1988).Google Scholar
18 Chadi, D.J., and Chang, K.J., Phys. Rev. Lett. 60, 2187 (1988).Google Scholar
19 Kaxiras, E., and Pandey, K.C., Phys. Rev. B 40, 8020 (1989).Google Scholar