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Switching Behavior in p-Type Hydrogenated Amorphous Silicon with One and Two Blocking Contacts

Published online by Cambridge University Press:  01 February 2011

Jian Hu ,
Howard M. Branz ,
Richard S. Crandall ,
Scott Ward  and
Qi Wang
Jian Hu
Affiliation:
National Renewable Energy Laboratory Golden, CO 80401, USA
Howard M. Branz
Affiliation:
National Renewable Energy Laboratory Golden, CO 80401, USA
Richard S. Crandall
Affiliation:
National Renewable Energy Laboratory Golden, CO 80401, USA
Scott Ward
Affiliation:
National Renewable Energy Laboratory Golden, CO 80401, USA
Qi Wang
Affiliation:
National Renewable Energy Laboratory Golden, CO 80401, USA
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Abstract

We compare switching behaviour in Cr/a-Si:H(p)/Ag and c-Si(p)/a-Si:H(p)/Ag structures containing p-type hydrogenated amorphous silicon. The a-Si:H layer is made by hot wire chemical vapor deposition. We observed that the switching is polarity-dependent only in the sample on c-Si(p). Switching to a low-resistance state occurs at 0.4 mA/cm2 when any of the metal contacts are biased positive. When the c-Si(p) is biased positive holes are injected and no switching occurs even up to 4 A/cm2. We suggest that the switching requires a blocking metal/a-Si(p), possibly because local electrical breakdown initiates metal filament formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , 12.2
Copyright
Copyright © Materials Research Society 2002

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References

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