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Surfactant-Mediated Si/Ge Epitaxial Crystal Growth

  • Eunja Kim, Chan Wuk OH (a1) and Young Hee Lee (a1)

Abstract

We investigate the kinetic role of a surfactant in the epitaxial Si/Ge crystal growth using ab initio molecular dynamics approach. We examine the previously suggested dimer-exchange mechanisms and find that kinetics plays a crucial role in determining the exchange process. We further find that the diffusion of adatoms on an island in the presence of a surfactant is quite different from the dimer-exchange process on a flat surface.

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9 Kim, E., Oh, C. W., Kim, J. Y., and Lee, Y. H., unpublished.

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