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Surfactant-Mediated Si/Ge Epitaxial Crystal Growth
Published online by Cambridge University Press: 03 September 2012
Abstract
We investigate the kinetic role of a surfactant in the epitaxial Si/Ge crystal growth using ab initio molecular dynamics approach. We examine the previously suggested dimer-exchange mechanisms and find that kinetics plays a crucial role in determining the exchange process. We further find that the diffusion of adatoms on an island in the presence of a surfactant is quite different from the dimer-exchange process on a flat surface.
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- Copyright © Materials Research Society 1997
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