Skip to main content Accessibility help
×
Home

Surfactant-Mediated Growth of Aigaas by Molecular Beam Epitaxy

  • Ron Kaspi (a1), Keith R. Evans (a2), Don C. Reynolds (a1), Jeff Brown (a2) and Marek Skowronski (a3)...

Abstract

Antimony was used as a surfactant during solid-source molecular beam epitaxy of AIGaAs layers. A steady-state surface-segregated population of Sb was maintained at the AIGaAs growth surface by providing a continuous Sb2 flux to compensate for loss due to thermal desorption. Above ∼ 650 °C, the incorporation rate of Sb was negligible, thereby allowing the deposition of AlGaAs layers despite the presence of Sb at the surface. A significant improvement in the optical quality of Al0.24Ga0 76As layers was observed by photoluminescence. In addition, extended reflection high energy electron diffraction oscillations and a reduction in Al0.24Ga0.76As surface roughness was observed when Sb was employed as a surfactant.

Copyright

References

Hide All
1. Tournié, E. and Ploog, K.H., Thin Solid Films 231, 43 (1993).
2. Osten, H.J., Klatt, J., Lippert, G., and Bugiel, E., J. Cryst. Growth 127, 396 (1993).
3. Copel, M. and Tromp, R.M., Appl. Phys. Lett. 58, 2648 (1991).
4. Copel, M., Reuter, M.C., and Tromp, R.M., Phys. Rev. Lett. 62, 632 (1989).
5. Higuchi, S. and Nakanishi, Y., Surface Sci. 254, L465 (1991).
6. Wolter, H., Schmidt, M. and Wandelt, K., Surface Sci. 298, 173 (1993).
7. Massies, J., Grandjean, N. and Etgens, V.H., Appl. Phys. Lett. 61, 99 (1992).
8. Grandjean, N., Massies, J. and Etgens, V.H., Phys. Rev. Lett. 69, 796 (1992).
9. Sakamoto, K., Kiki, M., Sakamoto, T., Matsuhata, H., J. Cryst. Growth 127, 392 (1993).
10. Weisbuch, C., Dingle, R., Gossard, A.C. and Wiegmann, W., J. Vac. Sci. Technol. 17, 1128 (1980).
11. Pavesi, L. and Guzzi, M., J. Appl. Phys. 75, 4779 (1994).
12. Alexandre, F., Goldstein, L., Leroux, G., Joncour, M.C., Thibierge, H. and Rao, E.V.K., J. Vac. Sci. Technol. B3, 950 (1985).
13. Chand, N., Chu, S.N.G., and Geva, M., Appl. Phys. Lett. 59, 2874 (1991).
14. Klein, J., Fisher, R., Drummond, T.J., Morkog, H. and Cho, A.Y., Electron. Lett. 19, 453 (1983)
15. Evans, K.R., Stutz, C.E., Yu, P.W., Wie, C.R., J. Vac. Sci. Technol. B8, 271 (1990).
16. Fatt, Y.S., J. Appl. Phys. 73, 3261 (1993).
17. Hove, J.M. Van and Cohen, P.I., Appl. Phys. Lett. 47, 726 (1985).
18. Yakimova, R., Paskova, T. and Ivanov, I., J. Crystal Growth 129, 143 (1993).

Surfactant-Mediated Growth of Aigaas by Molecular Beam Epitaxy

  • Ron Kaspi (a1), Keith R. Evans (a2), Don C. Reynolds (a1), Jeff Brown (a2) and Marek Skowronski (a3)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed