Hostname: page-component-76fb5796d-zzh7m Total loading time: 0 Render date: 2024-04-25T11:09:40.293Z Has data issue: false hasContentIssue false
  • English
  • Français

Surfactant Effects on Ordering in GaInP Grown by Omvpe

Published online by Cambridge University Press:  10 February 2011

G. B. Stringfellow ,
C. M. Fetzer ,
R. T. Lee ,
S. W. Jun  and
J. K. Shurtleff
G. B. Stringfellow
Affiliation:
College of Engineering, University of Utah, Salt Lake City, UT 84112
C. M. Fetzer
Affiliation:
College of Engineering, University of Utah, Salt Lake City, UT 84112
R. T. Lee
Affiliation:
College of Engineering, University of Utah, Salt Lake City, UT 84112
S. W. Jun
Affiliation:
College of Engineering, University of Utah, Salt Lake City, UT 84112
J. K. Shurtleff
Affiliation:
College of Engineering, University of Utah, Salt Lake City, UT 84112
Get access

Abstract

CuPt ordering in III/V semiconductor alloys is significant because of the dependence of bandgap energy on degree of order. This paper presents the effects of surfactants isoelectronic with P on ordering in GaInP grown by organometallic vapor phase epitaxy. Each of the three surfactants studied, As, Sb, and Bi, is found to result in disordering for layers grown using conditions that would otherwise produce highly ordered materials. The amount of surfactant required in the vapor phase (as the organometallic precursors TMAs, TESb, and TMBi) increases as the volatility of the group V element increases. Thus, the amount of TEAs required to produce disordered GaInP is approximately two orders of magnitude greater than for TMBi.

For Sb, the disordering is shown to be caused by a replacement of [110 ] P dimers on the nominally (001) surface by Sb dimers with the same orientation. For Bi, a marked change in the step structure coincides with the loss of order. For singular (001) substrates, island formation is suppressed by Bi.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 583 , 1999 , 201
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. See several papers in “Compositional Modulation and Ordering in Semiconductors”, ed. Pearsall, T.P. and Stringfellow, G.B., MRS Bulletin 22 #7, 1997.Google Scholar
2.Su, L.C., Ho, I.H., Kobayashi, N., and Stringfellow, G.B., J. Crystal Growth 145, 140 (1994).Google Scholar
3.Stringfellow, G.B., in Thin Films: Heteroepitaxial Systems, ed. Santos, M. and Liu, W.K. (World Scientific Publishing, 1998) pp. 64–116.Google Scholar
4.Bertness, K.A., Kurtz, S.R., Friedman, D.J., Kibbler, A.E., Kramer, C., and Olson, J.M., Appl. Phys. Lett. 65, 989 (1994); T. Takamoto, E. Ikeda, H. Kurita, and M. Ohmori, Appl. Phys. Lett. 70, 381 (1997).Google Scholar
5.Stringfellow, G.B., in High Brightness Light Emitting Diodes, edited by G.B., Stringfellow and M.G., Craford (Academic Press, Boston, 1997).Google Scholar
6.Ueno, Y. et al., Jpn. J. Appl. Phys. 29, L1666 (1990); K. Itaya, M. Ishikawa, G. Hatakoshi, and U. Uematsu, IEEE J. Quantum Electron. 27, 1496 (1991).Google Scholar
7.Schneider, R.P., Jones, E.D., and Follstaedt, D.M., Appl. Phys. Lett. 65, 587 (1994).Google Scholar
8.Hsu, Y., Fetzer, C.M., Stringfellow, G.B., Choi, C.J., and Seong, T.Y., J. Appl. Phys. (submitted).Google Scholar
9.Kurtz, S.R., Dawson, L.R., Biefeld, R.M., Follstaedt, D.M., and Doyle, B.L., Phys. Rev. B 46, 1909 (1992).Google Scholar
10.Zhang, S.B., Froyen, S., and Zunger, A., Appl. Phys. Lett. 67, 3141 (1995).Google Scholar
11.Murata, H., Ho, I.H., Su, L.C., Hosokawa, Y., and Stringfellow, G.B., J. Appl. Phys. 79, 6895 (1996).Google Scholar
12.Shurtleff, J.K., Lee, R.T., Fetzer, C.M., and Stringfellow, G.B., Appl. Phys. Lett. 75, 1914 (1999).Google Scholar
13.Lee, R.T., Fetzer, C.M., Shurtleff, J.K., Hsu, Yu, Stringfellow, G.B., Lee, S., and Seong, T.Y., J. Crystal Growth (to be published).Google Scholar
14.Copel, M., Reuter, M.C., Kaxiras, E., and Tromp, R.M., Phys. Rev. Lett. 63, 632 (1989); E. Tournie and K.H. Ploog, Thin Solid Films, 231, 43 (1993); R. Reinking, M. Kammier, M. Hornvon Hoegen, and K.R. Hofmann, Appl. Phys. Lett. 71, 924 (1997).Google Scholar
15.Massies, J., Grandjean, N., and Etgens, V.H., Appl. Phys. Lett. 61, 99 (1992); J.E. Cunningham, K.W. Goossen, W. Jan, and M.D. Williams, J. Vac. Sci. Technol. B 13, 646 (1994).Google Scholar
16.LeGoues, F.K., Kesan, V.P., Iyer, S.S., Tersoff, J., and Tromp, R., Phys. Rev. Lett. 64, 2038 (1990).Google Scholar
17.Oigawa, H., Wassermeier, M., Behrend, J., Daweritz, L., and Ploog, K.H., Surf. Sci. 376, 185 (1997).Google Scholar
18.Kandel, D. and Kaxiras, E., Phys. Rev. Lett. 75, 2742 (1995); C.W. Oh, E. Kim, and Y.H. Lee, Phys. Rev. Lett. 76, 776 (1996).Google Scholar
19.Kaspi, R., Evans, K.R., Reynolds, D.C., Brown, J., and Skowronski, M., Mat. Res. Soc. Symp. Proc.. Vol.379, 79 (1995); R. Kaspi, D.C. Reynolds, K.R. Evans, and E.N. Taylor, Inst. Phys. Conf. Ser. No. 141, 75 (1995).Google Scholar
20.Lee, S.H., Fetzer, C.M., and Stringfellow, G.B., J. Appl. Phys. 84, 2618 (1998); S.H. Lee, C.M. Fetzer, and G.B. Stringfellow, J. Appl. Phys. 85, 3590 (1999); S.H. Lee, C.M. Fetzer, and G.B. Stringfellow, J. Appl. Phys. 195, 13 (1998).Google Scholar
21.Hsu, T.C., Hsu, Yu, and Stringfellow, G.B., J. Crystal Growth 193, 1 (1998).Google Scholar
22.Harrison, W.A., Electronic Structure and the Properties of Solids: Physics of the Chemical Bond (Freeman, New York, 1980).Google Scholar
23.Stringfellow, G.B., Organometallic Vapor Phase Epitaxy: Theory and Practice, 2nd Edition (Academic Press, Boston, 1999), Chapter 2; and G.B. Stringfellow, J. Crystal Growth 27, 21 (1974).Google Scholar
24.Fetzer, C.M., Lee, R.T., Shurtleff, J.K., Stringfellow, G.B., and Seong, T.Y., Appl. Phys. Lett. (submitted for publication).Google Scholar
25.Gomyo, A., Makita, K., Hino, I., and Suzuki, T., Phys. Rev. Lett. 72, 673 (1994).Google Scholar
26.Lee, R.T., Shurtleff, J.K., Fetzer, C.M., Stringfellow, G.B., Lee, S. and Seong, T.Y., J. Appl. Phys. (submitted).Google Scholar
27.Lee, R.T., Shurtleff, J.K., Fetzer, C.M., and Stringfellow, G.B. (unpublished results).Google Scholar
28.Jun, S.W., Fetzer, C.M., Shurtleff, J.K., Stringfellow, G.B., and Seong, T.Y., Appl. Phys. Lett. (submitted for publication).Google Scholar
29.Jun, S.W., Fetzer, C.M., Shurtleff, J.K., Stringfellow, G.B., and Seong, T.Y. (unpublished results).Google Scholar