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Surface Studies of Silicon with a High Resolution Transmission Electron Microscope

  • J.M. Gibson (a1), M.L. McDonald (a1), F.C. Unterwald (a1), H.-J. Gossmann (a1), J.C. Bean (a1) and R.T. Tung (a1)...

Abstract

Using a specially modified ultra-high vacuum, ultra-high resolution transmission electron microscope, in-situ cleaned Si surfaces have been examined with near atomic resolution. By annealing the edges of a <110> thin Si specimen in-situ, it is found that low energy surfaces form. A surprising observation is that the {113} surface is stable and reconstructed by dimerization to a very low dangling bond density. It is also found that a 7×7 surface peridoicity can be preserved at a buried Si < 111 > / amorphous Si interface.

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