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Surface Structure Investigation of Epitaxial Nickel Silicides on Si(001)

Published online by Cambridge University Press:  26 February 2011

Judy H. Huang  and
R. Stanley Williams
Judy H. Huang
Affiliation:
Dept. of Chemistry & Biochemistry - Solid State Science Center, University of California, Los Angeles, CA 90024, USA
R. Stanley Williams
Affiliation:
Dept. of Chemistry & Biochemistry - Solid State Science Center, University of California, Los Angeles, CA 90024, USA
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Abstract

Low Energy Ion Scattering (LEIS) techniques have been used to examine epitaxial NiS2 films grown on the (001) surface of Si. The experimental results support a model of a NiSi2(001) surface that is a bulk-like but relaxed (001) Si plane with a 25%-30% concentration of vacancies. The 1/3-, 1/4-, and 1/5-order LEED spots observed for these surfaces may be the result of ordering of the vacancies, such that there are domains in which every 3rd, 4th, or 5th [110]-type atomic rows are missing in the Si terminated (001) plane.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 767
Copyright
Copyright © Materials Research Society 1987

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References

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