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Surface Reconstructions of Strained Epitaxial CoSi2/Si(100) Layers Studied by Scanning Tunneling Microscopy.

Published online by Cambridge University Press:  21 February 2011

R. Stalder ,
C. Schwarz ,
H. Sirringhaus  and
H. VON Känel
R. Stalder
Affiliation:
Laboratorium für Festkörperphysik, Eidgenössische Technische Hochschule Zürich, 8093 Zürich, Switzerland
C. Schwarz
Affiliation:
Laboratorium für Festkörperphysik, Eidgenössische Technische Hochschule Zürich, 8093 Zürich, Switzerland
H. Sirringhaus
Affiliation:
Laboratorium für Festkörperphysik, Eidgenössische Technische Hochschule Zürich, 8093 Zürich, Switzerland
H. VON Känel
Affiliation:
Laboratorium für Festkörperphysik, Eidgenössische Technische Hochschule Zürich, 8093 Zürich, Switzerland
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Abstract

Epitaxial single-domain CoSi2(100) layers were grown on Si(100) by use of a template technique. In-situ scanning tunneling microscopy (STM) and reflection high energy electron diffraction (RHEED) were used for a detailed surface study. The (√2×√2)R45 reconstruction of the Co-rich “C-surface” and the (3√2×√2)R45 as well as a newly discovered (√2×√2)R45 of the Si-rich “S-surface” were resolved in real space and are discussed in detail. The transition from the C- to the S-surface above 500 °C is related to a (2×2) reconstruction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 499
Copyright
Copyright © Materials Research Society 1992

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References

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