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Surface Reconstructions and III-V Stoichiometry: The Case of Cubic and Hexagonal GaN

Published online by Cambridge University Press:  10 February 2011

G. Feuillet ,
P. Hacke ,
H. Okumura ,
H. Hamaguchi ,
K. Ohta ,
K. Balakrishnan  and
S. Yoshida
G. Feuillet
Affiliation:
CEA/Grenoble, 38041 Grenoble Cedex 09 France. e-mail : feuillet@cea.fr
P. Hacke
Affiliation:
Electrotechnical laboratory, Tsukuba, Ibaraki, Japan
H. Okumura
Affiliation:
Electrotechnical laboratory, Tsukuba, Ibaraki, Japan
H. Hamaguchi
Affiliation:
Electrotechnical laboratory, Tsukuba, Ibaraki, Japan
K. Ohta
Affiliation:
Electrotechnical laboratory, Tsukuba, Ibaraki, Japan
K. Balakrishnan
Affiliation:
Electrotechnical laboratory, Tsukuba, Ibaraki, Japan
S. Yoshida
Affiliation:
Electrotechnical laboratory, Tsukuba, Ibaraki, Japan
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Abstract

Surface reconstructions for MBE grown GaN are identified. Different cases are considered according to the type of substrate or crystal symmetry and surface phase diagrams are obtained. Through different examples, it is shown how growth monitoring can be efficiently achieved through the use of surface reconstructions. Finally, from the observation that a residual arsenic overpressure in the MBE chamber changes the surface reconstructions of cubic (001) GaN grown onto 3C-SiC (001) substrates to that commonly observed for GaN growth on (001) GaAs, it is proposed that arsenic might be a surfactant for nitride growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 257
Copyright
Copyright © Materials Research Society 1997

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References

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