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Surface Preparation of Single Crystal C(001) Substrates for Homoepitaxial Diamond Growth

  • T. P. Humphreys (a1), J. B. Posthill (a1), D. P. Malta (a1), R. E. Thomas (a1), R. A. Rudder (a1), G. C. Hudson (a1) and R. J. Markunas (a1)...

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A novel substrate preparation procedure which can be employed to remove the original surface from as-received C(001) natural diamond substrates has been developed. A description of the various substrate processing steps which includes, low-energy ion implantation of C and O, high-temperature annealing, electrochemical etching and surface plasmas treatments is presented. Also demonstrated is the growth of topographically excellent homoepitaxial films by rf-plasma-enhanced chemical vapor deposition using water/ethanol mixtures on C(001) substrates.

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2. Posthill, J.B., Malta, D.P., Rudder, R.A., Hudson, G.C., Thomas, R.E., Markunas, R.J., Humphreys, T.P., Nemanich, R.J., Proc. 3rd Inter. Symp. on Diamond Materials, The Electrochemical Society, 93–17. 303 (1991).
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5. Posthill, J.B., Rudder, R.A., Hudson, G.C., Malta, D.P., Fountain, G.G., Thomas, R.E., Markunas, R.J., Humphreys, T.P., Nemanich, R.J. and Black, D.R., Proc. 2nd Inter. Symp. on Diamond Materials, The Electrochemical Society, 91–8. 274 (1991).
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Surface Preparation of Single Crystal C(001) Substrates for Homoepitaxial Diamond Growth

  • T. P. Humphreys (a1), J. B. Posthill (a1), D. P. Malta (a1), R. E. Thomas (a1), R. A. Rudder (a1), G. C. Hudson (a1) and R. J. Markunas (a1)...

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