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Surface Photovoltage Spectroscopy of InGaN/GaN/AlGaN Multiple Quantum Well Light Emitting Diodes

Published online by Cambridge University Press:  21 March 2011

B. Mishori ,
Martin Muñoz ,
L. Mourokh ,
Fred H. Pollak ,
J.P. DeBray ,
S. Ting  and
I. Ferguson
B. Mishori
Affiliation:
Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and ApplicationsBrooklyn College of the City University of New York Brooklyn, NY 11210
L. Mourokh
Affiliation:
Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and ApplicationsBrooklyn College of the City University of New York Brooklyn, NY 11210
Fred H. Pollak
Affiliation:
Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and ApplicationsBrooklyn College of the City University of New York Brooklyn, NY 11210
J.P. DeBray
Affiliation:
EMCORE Corporation 394 Elizabeth Avenue Somerset, NJ 08873
S. Ting
Affiliation:
EMCORE Corporation 394 Elizabeth Avenue Somerset, NJ 08873
I. Ferguson
Affiliation:
EMCORE Corporation 394 Elizabeth Avenue Somerset, NJ 08873
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Abstract

InGaN/GaN/AlGaN multiple quantum well light emitting diodes (MWQ LED's) with different levels of p-doping in the contact layer have been characterized using surface photovoltage spectroscopy (SPS). Due to the high sensitivity of the SPS technique to the electric field, there is a strong correlation between the p-doping level in the contact layer and the magnitude of the SPS signal originating from the MQW region. The experimental results are confirmed by a numerical simulation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E4.2
Copyright
Copyright © Materials Research Society 2001

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References

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