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Surface Phase Separation and Ordering in Compound Semiconductor Alloys

  • T.L. Mcdevitt (a1), S. Mahajan (a1), D.E. Laughlin (a1), W.A. Bonner (a2) and V.G. Keramidas (a2)...


The orientation dependence of phase separation has been examined in detail in InGaAsP layers grown by liquid phase epitaxy on (001), (110), (111)In and (123) InP substrates. It is shown that phase separation is two-dimensional in nature and does not occur along the growth direction for the cases examined. Further, phase separation takes place along the soft directions lying in the growth plane. These results very strongly suggest that phase separation evolves at the surface while the layer is growing.

CuPt-type ordering characteristics of InGaAsP layers are presented. In addition, the Influence of growth temperature and growth rate on domain sizes have been investigated in GaInP2 layers. A model has been proposed to rationalize the formation of domains and involves steps present on the surface. Results suggest that ordering like phase separation occurs at the surface while the layers is being deposited. It is inferred that the two microstructural features evolve concomitantly at the surface during layer growth.



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1. Cremoux, B. de, Hirtz, P. and Ricciardi, J., Inst. Phys. Conf. Ser. #56, 115 (1981).
2. Stringfellow, G.B., J. Cryst. Growth, 58, 194 (1982).10.1016/0022-0248(82)90226-3
3. Onabe, K., Japan J. Appl. Phys. 21, 1323 (1982).
4. Henoc, P., Izrael, A., Quillec, M. and Launois, H., Appl. Phys. Letts. 40, 963 (1982).10.1063/1.92968
5. Launois, H., Quillec, M., Glas, F. and Treacy, M.J., Inst. Phys. Conf. Ser. #65, 537 (1982).
6. Mahajan, S., Dutt, B.V., Temkin, H., Cava, R.J. and Bonner, W.A., J. Cryst. Growth, 68, 589 (1984).10.1016/0022-0248(84)90466-4
7. Chu, S.N.G., Nakahara, S., Strege, K.E. and Johnston, W.D. Jr., J. Appl. Phys. 57, 4610 (1985).10.1063/1.335368
8. Norman, A.G. and Booker, G.R., J. Appl. Phys. 57, 4715 (1985).10.1063/1.335333
9. Kuan, T.S., Kuech, T.F., Wang, W.I. and Wilkie, E.L., Phys. Rev. Letts. 54, 201 (1985).10.1103/PhysRevLett.54.201
10. Kuan, T.S., Wang, W.I. and Wilkie, E.L., Appl. Phys. Letts. 51, 51 (1987).10.1063/1.98884
11. Jen, H.R., Cherng, M.J. and Stringfellow, G.B., Ibid, 48, 1603 (1986).
12. Shahid, M.A., Mahajan, S., Laughlin, D.E. and Cox, H.M., Phys. Rev. Letts. 58, 2567 (1987).10.1103/PhysRevLett.58.2567
13. Norman, A.G., Mallard, R.E., Murgatroyd, I.J., Booker, G.R., Moore, A.H. and Scott, M.D., Inst. Phys. Conf. Ser. #87, 77 (1987).
14. Murgatroyd, I.J., Norman, A.G., Booker, G.R. and Kerr, T.M., in Proc. 11th Inter. Conf. on Electron Microscopy Kyoto, edited by Imura, T., Maruse, S. and Suzuki, T. (Japan Soc. Electron Microscopy, Tokyo, 1986) p. 1497.
15. Ihm, Y.E., Otsuka, N., J. Klen and Morkoc, H., Appl. Phys. Letts. 51, 2013 (1987).10.1063/1.98277
16. Gomyo, A., Suzuki, T., Kobayashi, K., Kawata, S. and Hino, I., Ibid 50, 673 (1987).10.1063/1.98062
17. Gomyo, A., Suzuki, T. and Iijima, S., Phys. Rev. Letts. 60, 2645 (1988).10.1103/PhysRevLett.60.2645
18. McKernan, S., DeCooman, B.C., Carter, C.B., Bour, D.P. and Shealy, J.R., J. Mats. Res. 3, 406 (1988).10.1557/JMR.1988.0406
19. Kondow, M., Kakibayashi, H. and Minagawa, S., J. Cryst. Growth 88, 291 (1988).10.1016/0022-0248(88)90285-0
20. Bellon, P., Chevalier, J.P., Marton, G.P., DuPont-Nivet, E., Thlebaut, C. and Andre, J.P.', Appl. Phys. Letts. 52, 567 (1988).10.1063/1.99419
21. Ueda, O., Takikawa, M., Komeno, J. and Umebu, I., Japan J. Appl. Phys. 26, L1824 (1987).10.1143/JJAP.26.L1824
22. Shahid, M.A. and Mahajan, S., Phys. Rev. B38,1344 (1988).10.1103/PhysRevB.38.1344
23. Mahajan, S., Shahid, M.A. and Laughlin, D.E., Inst. Phys. Conf. Ser. #100, 143 (1989).
24. Mahajan, S. and Shahid, M.A. in Advances in Materials, Processing and Devices in III-V Compound Semiconductors, edited by Sadana, D.K., Eastman, L.E. and Dupuis, R. (Mater. Res. Soc. Proc. 144, Pittsburgh, PA), p. 169 (1989).
25. Mahajan, S. in Physics of Semiconductor Devices, edited by Khokle, W.S. and Jain, S.C. (Macmillan India Ltd, New Delhi, India), p. 443 (1989).
26. Augarde, E., Mpaskoutas, M., Bellon, P., Chevalier, J.P. and Martin, G.P., Inst. Phys. Conf. Ser. #100, 155 (1989).
27. McDevitt, T.L., Ph.D. Dissertation, Carnegie Mellon University, Pittsburgh, May (1990).
28. Alerhand, O.L., Vanderbilt, D., Meade, R.D. and Joannopoulos, J.D., Phys. Rev. Letts. 61, 1973 (1988).10.1103/PhysRevLett.61.1973
29. Treacy, M.M.J., Gibson, J.M. and Howle, A., Phil. Mag. A, 51, 389 (1985).10.1080/01418618508237563
30. Kondow, M., Kaklbayashi, H., Tanaka, T. and Minagawa, S., Phys. Rev. Letts. 63, 884 (1989).10.1103/PhysRevLett.63.884
31. Suzuki, T., Gomyo, A. and Iijima, S., J. Cryst. Growth 93, 396 (1988).10.1016/0022-0248(88)90559-3
32. Srivastava, G.P., Martins, J.L. and Zunger, A., Phys. Rev. B31, 2561 (1985).10.1103/PhysRevB.31.2561
33. Zunger, A., private communication (1990).
34. Nakayama, H. and Fujita, H., Inst. Phys. Conf. Ser. #79, 289 (1985).

Surface Phase Separation and Ordering in Compound Semiconductor Alloys

  • T.L. Mcdevitt (a1), S. Mahajan (a1), D.E. Laughlin (a1), W.A. Bonner (a2) and V.G. Keramidas (a2)...


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