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Surface Microchemical Reactions during Hydrogenated Silicon Growth Studied by In-situ ESR Technique

Published online by Cambridge University Press:  17 March 2011

Satoshi Yamasaki
Satoshi Yamasaki*
Affiliation:
Joint Research Center for Atom Technology (JRCAT) -National Institute for Advanced Interdisciplinary Research (NAIR) 1-1-4 Higashi, Tsukuba-City, Ibaraki 305-9562, Japan
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Abstract

The in-situ ESR technique is applied to a plasma-enhanced chemical vapor deposition (PECVD) system in order to investigate the surface microchemical reactions during the growth of hydrogenated amorphous silicon (a-Si:H) and plasma treatments of H2 and Ar gases on a- Si:H. The growth model of a-Si:H and the role of H atoms on a-Si:H films are discussed using the experimental results. The recent results on the dynamic surface reactions of crystalline silicon with oxygen molecules in an ultra-high-vacuum ESR system are introduced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A1.1
Copyright
Copyright © Materials Research Society 1999

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References

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