Article contents
Surface Charge Imaging in Semiconductor Wafers by Surface Photovoltage (SPV)
Published online by Cambridge University Press: 22 February 2011
Abstract
We present fast, wafer-scale imaging of the surface charge achieved via non-contact measurement of the surface potential barrier by surface photovoltage (SPV) under high excitation levels. The approach is capable of resolving surface charge differences as small as 108 q/cm2. Fundamentals of surface charge imaging are discussed, and the method is compared with standard SPV contamination mapping. Examples include problems relevant to silicon IC fabrication and surface charge maps of GaAs and InP.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1992
References
REFERENCES
- 5
- Cited by