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Surface Characterisation of Si After HF Treatments and its Influence on the Dielectric Breakdown of Thermal Oxides

Published online by Cambridge University Press:  25 February 2011

S. Verhaverbeke ,
J. Alay ,
P. Mertens ,
M. Meuris ,
M. Heyns ,
W. Vandervorst ,
M. Murrell  and
C. Sofield
S. Verhaverbeke
Affiliation:
IMIEC, Kapeldreef 75, B-3001 Leuven, Belgium
J. Alay
Affiliation:
IMIEC, Kapeldreef 75, B-3001 Leuven, Belgium LCMM, Universitat de Barcelona, Av. Diagonal 645, 08028 Barcelona
P. Mertens
Affiliation:
IMIEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Meuris
Affiliation:
IMIEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Heyns
Affiliation:
IMIEC, Kapeldreef 75, B-3001 Leuven, Belgium
W. Vandervorst
Affiliation:
IMIEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Murrell
Affiliation:
UKAEA, Harwell Laboratory B477, Oxfordshire, OX11ORA, UK
C. Sofield
Affiliation:
UKAEA, Harwell Laboratory B477, Oxfordshire, OX11ORA, UK
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Abstract

The characteristics of the HF-treated Si-surface are investigated as a function of dipping time in dilute HF solutions. It is found that the contact angle is a very sensitive measure for the degree of oxidation of the Si-surface. The importance of obtaining a perfectly passivated surface in order to reduce the particle deposition on the surface is shown. HF-last cleans are found to be beneficial in terms of metallic contamination and gate oxide integrity. The importance of the loading ambient in furnaces is investigated after HF-treatments and RCA-cleans.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 391
Copyright
Copyright © Materials Research Society 1992

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References

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