Hostname: page-component-76fb5796d-skm99 Total loading time: 0 Render date: 2024-04-25T13:02:09.392Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface And Interface Study Of Pdcr/Sic Schottky Diode Gas Sensor Annealed At 425°C

Published online by Cambridge University Press:  10 February 2011

Liang-Yu Chen ,
Gary W. Hunter ,
Philip G. Neudeck  and
Dak Knight
Liang-Yu Chen
Affiliation:
NASA Lewis Research Center, Cleveland, OH 44135
Gary W. Hunter
Affiliation:
NASA Lewis Research Center, Cleveland, OH 44135
Philip G. Neudeck
Affiliation:
NASA Lewis Research Center, Cleveland, OH 44135
Dak Knight
Affiliation:
NASA Lewis Research Center, Cleveland, OH 44135
Get access

Abstract

The surface and interface properties of a Pd0.9Cr0.1/SiC Schottky diode gas sensor both before and after annealing are investigated using Auger electron spectroscopy (AES), scanning electron spectroscopy (SEM), and energy dispersive spectroscopy (EDS). At room temperature the alloy reacted with SiC and formed PdxSi only in a very narrow interfacial region. After annealing for 250 hours at 425 °C, the surface of Schottky contact area has much less silicon and carbon contamination than that found on the surface of an annealed Pd/SiC structure. PdxSi formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. The chromium concentration with respect to palladium is quite uniform down to deep interface region. A stable catalytic surface and a clean layer of Pd0.9Cr0.1 film are likely responsible for significantly improved device sensitivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 259
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Hunter, G. W.,, Neudeck, P. G., Chen, L.-Y., Knight, D., Liu, C. C. and Wu, Q. H., 31st AIAA/ASME/SAE/ASEE Joint Propulsion Conference and Exhibit, San Diego, CA/ July 10–12, 1995, AIAA Paper 95–2647.Google Scholar
2. Chen, L.-Y., Hunter, G. W., Neudeck, P. G., Knight, D., Petit, J. and Bansal, G., submitted to J. Vacuum Sci Technol. (A) and Chen, L.-Y., Hunter, G. W., Neudeck, P. G., Bansal, G., Petit, J., Knight, D., Liu, C. C. and Wu, Q. H., ‘Electronic And Interfacial Properties Of Pd/6H-SiC Schottky Diode Gas Sensors’, Transactions of Third International High Temperature Electronics Conference, Albuquerue, New Mexico (1996).Google Scholar
3. Hunter, G. W., Neudeck, P. G., Chen, L.-Y., Knight, D., Liu, C. C., and Wu, Q. H.,, ‘SiC-Based Schottky Diode Gas Sensors’, presented at International Conference on SiC, II-Nitrides and Related Materials, Stockholm, Sweden, September, 1997.Google Scholar
4. Bermudez, V.M., Appl. Surface Sci. 17, 12–2 (1983).Google Scholar
5. Zeller, M.V., Bellina, J., Saha, N., Filar, J., Hargraeves, J., and Will, H., Mat. Res. Soc. Symp. Proc., Vol.97, 1987.Google Scholar