Surface and Interface Analysis of Thin-Film/Si(Substrate) Contacts by Sxes
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- DOI: https://doi.org/10.1557/PROC-448-377
- Published online by Cambridge University Press: 03 September 2012
Abstract
A soft X-ray emission spectroscopy(SXES) study under an energetic electron irradiation has been applied to a nondestructive buried interface analysis of a thin-film(e.g., Cr)/Si(substrate) contact system, where the energy of primary electrons, Ep , is less than 20keV. An interesting point of this method is that we can have a specific signal for an element to be used as a finger print, otherwise it is difficult. By using this e-beam excited SXES, we can study an interface buried deep in a rather thick overlayer, e.g., more than a hundred of nm, which is due to the fact that a mean free path of a soft X-ray or an X-ray production depth is much larger than the mean free path of an energetic electron in solids. Electronic structural study of silicides by SXES is also shown.
Copyright
COPYRIGHT: © Materials Research Society 1997
References
Surface and Interface Analysis of Thin-Film/Si(Substrate) Contacts by Sxes
-
- DOI: https://doi.org/10.1557/PROC-448-377
- Published online by Cambridge University Press: 03 September 2012
