Hostname: page-component-848d4c4894-8kt4b Total loading time: 0 Render date: 2024-06-25T16:21:08.506Z Has data issue: false hasContentIssue false
  • English
  • Français

Suppression of Staebler-Wronski Effect Induced Electrical Crosstalk in a-Si:H-Based Image Sensors

Published online by Cambridge University Press:  21 March 2011

Jeremy A. Theil
Jeremy A. Theil*
Affiliation:
Semiconductor Products Group, Agilent Technologies, 5301 Stevens Creek Blvd., MS 51L-GO, Santa Clara, CA, 95051, U.S.A.
Get access

Abstract

Hydrogenated amorphous silicon photodiodes have been considered for use in array-based image sensors. They promise to significantly reduce the size and cost of CMOS image sensors, while offering the promise of improved pixel sensitivity. However, Staebler-Wronski Effect (SWE) based electrical crosstalk degradation has been a major concern in their acceptance, due to degraded spatial contrast and color fidelity. Since the SWE is a fundamental mechanism of a Si:H, solutions to this issue must look to ways of mitigating the SWE on diode array performance rather than elimination of SWE. In order to study electrical crosstalk, a novel device structure that inhibits light from reaching portions of the a-Si:H/dielectric interface was designed and fabricated to directly measure interpixel leakage currents. Results from these structures indicate that edge leakage can be a significant contributing component to the measured signal. In addition, a CMOS-compatible structure to suppress electrical crosstalk was designed and fabricated. Results from these structures demonstrate suppression of crosstalk up to lateral electric fields of at least 2 x 104 V/cm. Such suppression is adequate for densely packed minimum-size pixel arrays. Aspects of the design and implementation of the structure will also be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A10.6
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Theil, J. A., Snyder, R., Hula, D., Lindahl, K., Haddad, H., and Roland, J., J. Non-Cryst. Sol., 299, 1234 (2002).Google Scholar
[2] Theil, J. A., Cao, M., Kooi, G., Ray, G. W., Greene, W., Lin, J., Budrys, A. J., Yoon, U., Ma, S., and Stork, H., MRS Symp. Proc., 609, A14.3.1 (2000).Google Scholar
[3] Fischer, H., Schulte, J., Rieve, P., and Böhm, M., Mat. Res. Soc. Symp. Proc., 336, 867 (1994).Google Scholar
[4] Theil, J. A., Haddad, H., Snyder, R., Zelman, M., Hula, D., and Lindahl, K., Proceedings of the SPIE, 4435, 206 (2001).Google Scholar
[5] Theil, J. A., IEE Proc. Circuits, Devices, and Systems, 150(4), accepted for publication (2003).Google Scholar
[6] Theil, J. A., MRS Symp. Proc., 762, 21.4 (2003).Google Scholar
[7] Hack, M., Shaw, J. G., and Shur, M., J. Non-Cryst. Sol., 115, 150 (1989).Google Scholar
[8] Shur, M., and Hack, M., J. Appl. Phys., 55(10) 3831 (1984).Google Scholar
[9] Shur, M., Hyun, C., and Hack, M., J. Appl. Phys., 59(7) 2488 (1986).Google Scholar