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Suppression of Ni Silicide Formation by Se Passivation of Si(001)

Published online by Cambridge University Press:  17 March 2011

Janadass Shanmugam ,
Michael Coviello ,
Darshak Udeshi ,
Wiley P. Kirk  and
Meng Tao Nano
Janadass Shanmugam
Affiliation:
FAB Center and Department of Electrical Engineering, University of Texas at Arlington, Arlington, TX 76019, USA
Michael Coviello
Affiliation:
FAB Center and Department of Electrical Engineering, University of Texas at Arlington, Arlington, TX 76019, USA
Darshak Udeshi
Affiliation:
FAB Center and Department of Electrical Engineering, University of Texas at Arlington, Arlington, TX 76019, USA
Wiley P. Kirk
Affiliation:
FAB Center and Department of Electrical Engineering, University of Texas at Arlington, Arlington, TX 76019, USA
Meng Tao Nano
Affiliation:
FAB Center and Department of Electrical Engineering, University of Texas at Arlington, Arlington, TX 76019, USA
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Abstract

Valence mending of a semiconductor surface, such as the Se-passivated Si(001) surface, improves the chemical and thermal stability of the surface as compared to the bare Si(001) surface. In this paper, we report the suppression of Ni silicide formation between Ni and Si(001) through monolayer passivation of Si(001) by Se. Ni was deposited on both Se-passivated and bare Si(001) surfaces. The samples were annealed at temperatures from 400°C to 700°C. Cross-sectional TEM (Transmission Electron Microscopy) revealed that Ni on bare samples reacted with Si at 400°C and formed silicide, whereas Ni on Se-passivated samples did not react with Si at 500°C. Surface composition analysis by XPS (X-Ray Photoelectron Spectroscopy) showed pure Ni surface on Se-passivated samples annealed at 400°C and 500°C, but silicide surface on bare samples annealed at the same temperatures. Hence, Se passivation suppresses the formation of Ni silicide on the Si(001) surface by over 100°C as compared to the bare Si(001) surface. These results may have important implications in source/drain engineering in sub-100 nm Si CMOS (Complementary Metal Oxide Semiconductor) devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C4.1
Copyright
Copyright © Materials Research Society 2004

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References

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