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Successful Preparation of High Frequency HBT by Integrated RTCVD Processes

Published online by Cambridge University Press:  15 February 2011

G. Ritter ,
B. Tillack  and
D. Knoll
G. Ritter
Affiliation:
Institute for Semiconductor Physics, W. Korsing Str. 2, D-15230 Frankfurt (Oder), Germany
B. Tillack
Affiliation:
Institute for Semiconductor Physics, W. Korsing Str. 2, D-15230 Frankfurt (Oder), Germany
D. Knoll
Affiliation:
Institute for Semiconductor Physics, W. Korsing Str. 2, D-15230 Frankfurt (Oder), Germany
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Abstract

Complete epitaxial Si-SiGe-Si- stacks with a defined doping profile for each component have been deposited on Si substrates from the system SiH4, GeH4, H2, B2H6, PH3 by RTCVD. The deposition has been carried out at a temperature of 650°C for Si and of 500°C for SiGe, respectively, both at a pressure of 2 mbar. The developed epitaxial process including an effective H2 in-situ preclean annealing has been integrated in a simple double mesa technology for the preparation of SiGe base heterojunction bipolar transistors (HBT). Despite the simplicity of the technology and the lithographical level allowing emitter dimensions of 2.3×2.5 μm2 only, test devices on 4” wafers reached transit frequencies fT and maximum oscillation frequencies fmax of higher than 60 GHz and 30 GHz, respectively. Besides, a low base current has been measýnl as proof for a good layer quality.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 387: Symposium P – Rapid Thermal and Integrated Processing IV , 1995 , 341
Copyright
Copyright © Materials Research Society 1995

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